Full Area Laser Doped Boron Emitter Silicon Solar Cells

被引：0
|
作者：
Dahlinger, M. [1 ]
Eisele, S. J. [1 ]
Lill, P. C. [1 ]
Koehler, J. R. [1 ]
Werner, J. H. [1 ]
机构：
[1] Univ Stuttgart, Inst Photovolta Ipv, D-70569 Stuttgart, Germany
来源：
2012 38TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) | 2012年
关键词：
n-Type; laser doping; boron; sputtering; silicon;
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
We present full area laser doped boron emitter n-type silicon solar cells using sputtered boron as dopant source. Quasi-steady-state photo conductance decay measurements show a low emitter saturation current density J(0e) and an open circuit voltage limit of V-oc,V-lim = 702 mV for a 128 Omega/sq emitter proving the high quality of the laser doped boron emitters. The first 4 cm(2) cell yield efficiencies up to eta = 16.7% without optimization of the cell structure.
引用
收藏
页码：1029 / 1031
页数：3
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