The effect of emitter diffusion formation methods for laser doped selective emitter silicon solar cells

In this paper we represent three different methods of forming a lightly doped emitter for the fabrication of laser doped selective emitter solar cells on a pilot production line at Shinsung Solar Energy which effectively result in a single-sided diffusion. All the 6 inch samples suffer from low J(SC) compared to the 5inch sample due to a different plating ratio is between the 5 inch and 6 inch cells. We optimized the front electrode process by plating achieving an efficiency of 19.2% on a 6 inch solar grade p-type CZ wafer.