Variation of the feedback sensitivity in a 1.55 μm InAs/InP quantum-dash Fabry-Perot semiconductor laser

被引：23
|
作者：
Grillot, F. [1 ]
Naderi, N. A. [1 ]
Pochet, M. [1 ]
Lin, C-Y. [1 ]
Lester, L. F. [1 ]
机构：
[1] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA
来源：
APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 19期
关键词：
III-V semiconductors; indium compounds; laser feedback; quantum dot lasers;
D O I：
10.1063/1.2998397
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Dynamic feedback properties of a 1.55 mu m InAs/InP quantum dash laser are reported. The ground state linewidth enhancement factor (alpha(H)-factor) is found to be enhanced from similar to 1 to similar to 14 as the bias current is increased beyond the threshold value. As a consequence of the variation in the alpha(H)-factor, the feedback sensitivity of the quantum dash semiconductor laser is dramatically affected over the entire range of operational currents. The onset of its critical feedback regime, which is incompatible with data transmission, is shown to exhibit a variation of approximately 20 dB for the quantum dash device.
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页数：3
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