A microelectromechanically tunable asymmetric Fabry-Perot quantum well modulator at 1.55 μm

被引：5
|
作者：
Stievater, T. H. [1 ]
Park, D. [1 ]
Pruessner, M. W. [2 ]
Rabinovich, W. S. [1 ]
Kanakaraju, S. [3 ]
Richardson, C. J. K. [3 ]
机构：
[1] USN, Res Lab, Washington, DC 20375 USA
[2] SFA Inc, Crofton, MD 21114 USA
[3] Lab Phys Sci, College Pk, MD 20740 USA
来源：
OPTICS EXPRESS | 2008年 / 16卷 / 21期
关键词：
D O I：
10.1364/OE.16.016766
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Placing a quantum well modulator in an asymmetric Fabry-Perot cavity enables significantly higher contrast ratios than are possible in a conventional surface-normal quantum well modulator. However, fixed-cavity asymmetric Fabry-Perot quantum well modulators require extremely precise and uniform crystal growth and are sensitive to small fluctuations in temperature or angle of incidence. Here, we experimentally demonstrate an InP-based microelectromechanically tunable asymmetric Fabry-Perot quantum well modulator that operates in the optical C-band. By actuating a suspended InGa AlAs reflector, the cavity mode can be perfectly matched to the appropriate quantum well absorption wavelength. The devices exhibit contrast ratios over 30 (15 dB) at 8 volts quantum well bias and modulation speeds of 1 MHz. (C) 2008 Optical Society of America
引用
收藏
页码：16766 / 16773
页数：8
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