Dependence of Generation-Recombination Noise With Gate Voltage in FD SOI MOSFETs

被引：21

作者：

Luque Rodriguez, Abraham ^{[1
]}

Jimenez Tejada, Juan A. ^{[1
]}

Rodriguez-Bolivar, Salvador ^{[1
]}

Almeida, Luciano Mendes ^{[2
]}

Aoulaiche, Marc ^{[3
]}

Claeys, Cor ^{[4
,5
]}

Simoen, Eddy ^{[3
]}

机构：

[1] Univ Granada, Dept Elect & Tecnol Comp, Fac Ciencias, E-18071 Granada, Spain

[2] Univ Sao Paulo, Lab Sistemas Integraveis, PSI, BR-05508010 Sao Paulo, Brazil

[3] Interuniv Microelect Ctr, B-3001 Louvain, Belgium

[4] Katholieke Univ Leuven, Dept Elect Engn, B-3001 Louvain, Belgium

[5] IMEC, B-3001 Louvain, Belgium

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2012年 / 59卷 / 10期

关键词：

Fully depleted (FD) transistor; low-frequency noise (LFN); multigate transistors; noise modeling; simulation of electronic devices;

D O I：

10.1109/TED.2012.2208970

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A model for computing the generation-recombination noise due to traps within the semiconductor film of fully depleted silicon-on-insulator MOSFET transistors is presented. Dependence of the corner frequency of the Lorentzian spectra on the gate voltage is addressed in this paper, which is different to the constant behavior expected for bulk transistors. The shift in the corner frequency makes the characterization process easier. It helps to identify the energy position, capture cross sections, and densities of the traps. This characterization task is carried out considering noise measurements of two different candidate structures for single-transistor dynamic random access memory devices.

引用

页码：2780 / 2786

页数：7

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