High field electron and hole transport in wurtzite InN

被引:3
|
作者
Reklaitis, Antanas [1 ]
机构
[1] Ctr Phys Sci & Technol, Inst Semicond Phys, LT-01108 Vilnius, Lithuania
来源
关键词
carrier transport; high electric fields; InN; Monte Carlo simulations; MONTE-CARLO CALCULATION; SEMICONDUCTORS; GAN; DIFFUSION; ALN;
D O I
10.1002/pssb.201248081
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
A Monte Carlo technique has been used to investigate the steady-state, transient, and small-signal transport of electrons and holes in InN in high electric fields. The drift velocities and diffusion coefficients of electrons and holes are calculated using single-particle Monte Carlo method. The transient drift velocities of electrons and holes are evaluated from ensemble Monte Carlo simulations. The electron small-signal mobility is estimated. The threshold frequency of 550?GHz for the negative differential mobility (NDM) in InN is obtained.
引用
收藏
页码:1566 / 1570
页数:5
相关论文
共 50 条
  • [41] Isostructural phase transition in InN wurtzite
    Bellaiche, L
    Kunc, K
    Besson, JM
    PHYSICAL REVIEW B, 1996, 54 (13): : 8945 - 8949
  • [42] Anisotropy of the dielectric function for wurtzite InN
    Goldhahn, R
    Winzer, AT
    Cimalla, V
    Ambacher, O
    Cobet, C
    Richter, W
    Esser, N
    Furthmüller, J
    Bechstedt, F
    Lu, H
    Schaff, WJ
    SUPERLATTICES AND MICROSTRUCTURES, 2004, 36 (4-6) : 591 - 597
  • [43] Optical bandgap energy of wurtzite InN
    Matsuoka, T
    Okamoto, H
    Nakao, M
    Harima, H
    Kurimoto, E
    APPLIED PHYSICS LETTERS, 2002, 81 (07) : 1246 - 1248
  • [44] High-field hole transport in silicon nanowires
    Verma, A.
    Buin, A. K.
    Anantram, M. P.
    JOURNAL OF APPLIED PHYSICS, 2009, 106 (11)
  • [45] Calculated optical properties of wurtzite InN
    Jin, H.
    Zhao, G. L.
    Bagayoko, D.
    JOURNAL OF APPLIED PHYSICS, 2007, 101 (03)
  • [46] Monte Carlo simulation of the hole transport properties for wurtzite GaN
    Guo Bao-Zeng
    Gong Na
    Shi Jian-Ying
    Wang Zhi-Yu
    ACTA PHYSICA SINICA, 2006, 55 (05) : 2470 - 2475
  • [47] Terahertz Current Oscillation in Wurtzite InN
    Feng Wei
    CHINESE PHYSICS LETTERS, 2012, 29 (01)
  • [48] MOVPE growth and photoluminescence of wurtzite InN
    Matsuoka, T
    Okamoto, H
    Takahata, H
    Mitate, T
    Mizuno, S
    Uchiyama, Y
    Makimoto, T
    JOURNAL OF CRYSTAL GROWTH, 2004, 269 (01) : 139 - 144
  • [49] Electron-hole coexistence in disordered graphene probed by high-field magneto-transport
    Poumirol, J. M.
    Escoffier, W.
    Kumar, A.
    Goiran, M.
    Raquet, B.
    Broto, J. M.
    NEW JOURNAL OF PHYSICS, 2010, 12
  • [50] High-Field Transport in an Electron-Hole Plasma: Transition from Ballistic to Drift Motion
    Bowlan, P.
    Kuehn, W.
    Reimann, K.
    Woerner, M.
    Elsaesser, T.
    Hey, R.
    Flytzanis, C.
    PHYSICAL REVIEW LETTERS, 2011, 107 (25)