carrier transport;
high electric fields;
InN;
Monte Carlo simulations;
MONTE-CARLO CALCULATION;
SEMICONDUCTORS;
GAN;
DIFFUSION;
ALN;
D O I:
10.1002/pssb.201248081
中图分类号:
O469 [凝聚态物理学];
学科分类号:
070205 ;
摘要:
A Monte Carlo technique has been used to investigate the steady-state, transient, and small-signal transport of electrons and holes in InN in high electric fields. The drift velocities and diffusion coefficients of electrons and holes are calculated using single-particle Monte Carlo method. The transient drift velocities of electrons and holes are evaluated from ensemble Monte Carlo simulations. The electron small-signal mobility is estimated. The threshold frequency of 550?GHz for the negative differential mobility (NDM) in InN is obtained.