High field electron and hole transport in wurtzite InN

被引：3
|
作者：
Reklaitis, Antanas [1 ]
机构：
[1] Ctr Phys Sci & Technol, Inst Semicond Phys, LT-01108 Vilnius, Lithuania
来源：
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2012年 / 249卷 / 08期
关键词：
carrier transport; high electric fields; InN; Monte Carlo simulations; MONTE-CARLO CALCULATION; SEMICONDUCTORS; GAN; DIFFUSION; ALN;
D O I：
10.1002/pssb.201248081
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A Monte Carlo technique has been used to investigate the steady-state, transient, and small-signal transport of electrons and holes in InN in high electric fields. The drift velocities and diffusion coefficients of electrons and holes are calculated using single-particle Monte Carlo method. The transient drift velocities of electrons and holes are evaluated from ensemble Monte Carlo simulations. The electron small-signal mobility is estimated. The threshold frequency of 550?GHz for the negative differential mobility (NDM) in InN is obtained.
引用
收藏
页码：1566 / 1570
页数：5
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