Planar graphene tunnel field-effect transistor

被引：15
|
作者：
Katkov, V. L. [1 ]
Osipov, V. A. [1 ]
机构：
[1] Joint Inst Nucl Res, Bogoliubov Lab Theoret Phys, Dubna 141980, Russia
来源：
APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 05期
基金：
俄罗斯基础研究基金会;
关键词：
QUANTUM TRANSPORT; PARALLEL; SURFACE; EDGES;
D O I：
10.1063/1.4863820
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We propose a concept for a graphene tunnel field-effect transistor. The main idea is based on the use of two graphene electrodes with zigzag termination divided by a narrow gap under the influence of the common gate. Our analysis shows that such device will have a pronounced switching effect at low gate voltage and high on/off current ratio at room temperature. (C) 2014 AIP Publishing LLC.
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页数：4
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