Growth and characterization of GaAs/InxGa1-xAs/GaAs axial nanowire heterostructures with symmetrical heterointerfaces

被引：5

作者：

Lu Xiao-Long ^{[1
]}

Zhang Xia ^{[1
]}

Liu Xiao-Long ^{[1
]}

Yan Xin ^{[1
]}

Cui Jian-Gong ^{[1
]}

Li Jun-Shuai ^{[1
]}

Huang Yong-Qing ^{[1
]}

Ren Xiao-Min ^{[1
]}

机构：

[1] Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China

来源：

CHINESE PHYSICS B | 2013年 / 22卷 / 06期

基金：

中国国家自然科学基金; 对外科技合作项目（国际科技项目）;

关键词：

nanostructures; nanowire heterostructures; metal-organic chemical vapor deposition; GAAS NANOWIRES; MOVPE;

D O I：

10.1088/1674-1056/22/6/066101

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report on the Au-assisted vapour-liquid-solid (VLS) growth of GaAs/InxGa1-xAs/GaAs (0.2 <= x <= 1) axial double-heterostructure nanowires on GaAs (111) B substrates via the metal-organic chemical vapor deposition (MOCVD) technique. The influence of the indium (In) content in an Au particle on the morphology of nanowires is investigated systematically. A short period of pre-introduced In precursor before the growth of InxGa1-xAs segment, coupled with a group III precursor interruption, is conducive to obtaining symmetrical heterointerfaces as well as the desired In/Ga ratio in the InxGa1-xAs section. The nanowire morphology, such as kinking and tapering, are thought to be related to the In composition in the catalyst alloy as well as the VLS growth mechanism.

引用

页数：6

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