Growth and characterization of GaAs/InxGa1-xAs/GaAs axial nanowire heterostructures with symmetrical heterointerfaces

被引：5
|
作者：
Lu Xiao-Long [1 ]
Zhang Xia [1 ]
Liu Xiao-Long [1 ]
Yan Xin [1 ]
Cui Jian-Gong [1 ]
Li Jun-Shuai [1 ]
Huang Yong-Qing [1 ]
Ren Xiao-Min [1 ]
机构：
[1] Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China
来源：
CHINESE PHYSICS B | 2013年 / 22卷 / 06期
基金：
中国国家自然科学基金; 对外科技合作项目（国际科技项目）;
关键词：
nanostructures; nanowire heterostructures; metal-organic chemical vapor deposition; GAAS NANOWIRES; MOVPE;
D O I：
10.1088/1674-1056/22/6/066101
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We report on the Au-assisted vapour-liquid-solid (VLS) growth of GaAs/InxGa1-xAs/GaAs (0.2 <= x <= 1) axial double-heterostructure nanowires on GaAs (111) B substrates via the metal-organic chemical vapor deposition (MOCVD) technique. The influence of the indium (In) content in an Au particle on the morphology of nanowires is investigated systematically. A short period of pre-introduced In precursor before the growth of InxGa1-xAs segment, coupled with a group III precursor interruption, is conducive to obtaining symmetrical heterointerfaces as well as the desired In/Ga ratio in the InxGa1-xAs section. The nanowire morphology, such as kinking and tapering, are thought to be related to the In composition in the catalyst alloy as well as the VLS growth mechanism.
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页数：6
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