Uniform design and regression analysis of LPCVD boron carbide from BCl3-CH4-H2 system

被引:19
|
作者
Liu, Yongsheng [1 ]
Zhang, Litong [1 ]
Cheng, Laifei [1 ]
Zeng, Qingfeng [1 ]
Zhang, Weihua [1 ]
Yang, Wenbin [1 ]
Feng, Zude [2 ]
Li, Siwei [2 ]
Zeng, Bin [2 ]
机构
[1] Northwestern Polytech Univ, Natl Key Lab Thermostruct Composite Mat, Xian 710072, Shaanxi, Peoples R China
[2] Xiamen Univ, Adv Mat Lab, Dept Mat Sci & Engn, Xiamen 361005, Peoples R China
基金
美国国家科学基金会;
关键词
Uniform design; CVD; Microstructure; Boron carbide; Deposition mechanisms; CHEMICAL-VAPOR-DEPOSITION; PYROLYTIC CARBON; MECHANISM; CVD; PYROCARBON; CHEMISTRY; COATINGS; KINETICS; METHANE;
D O I
10.1016/j.apsusc.2008.12.075
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Boron carbide was prepared by low pressure chemical vapor deposition (LPCVD) from BCl3-CH4-H-2 system. The deposition process conditions were optimized through using a uniform design method and regression analysis. The regression model of the deposition rate was established. The influences of deposition temperature (T), deposition time (t), inlet BCl3/CH4 gas ratio (delta), and inlet H-2/CH4 gas ratio (theta) on deposition rate and microstructure of the coatings were investigated. The optimized deposition parameters were obtained theoretically. The morphologies, phases, microstructure and composition of deposits were characterized using scanning electron microscopy (SEM), X-ray diffraction (XRD), Raman micro-spectroscopy, transmission electron microscopy (TEM), energy dispersive spectra (EDS), and Auger electron spectra (AES), the results showed that different boron carbides were produced by three kinds of deposition mechanisms. Crown Copyright (C) 2009 Published by Elsevier B.V. All rights reserved.
引用
收藏
页码:5729 / 5735
页数:7
相关论文
共 50 条
  • [21] THE BORON-NITRIDE DEPOSITION IN THE BCL3-H2-N2-SYSTEM
    SCHUKIN, VG
    MARUSIN, VV
    IZVESTIYA SIBIRSKOGO OTDELENIYA AKADEMII NAUK SSSR SERIYA KHIMICHESKIKH NAUK, 1988, (06): : 88 - 95
  • [22] Influence of B2H6/CH4 and B(CH3)3 as process gas on boron carbide coatings: An in situ photoelectron spectroscopy study
    Kunzli, H.
    Gantenbein, P.
    Steiner, R.
    Oelhafen, P.
    Journal of Nuclear Materials, 1992, 196-98 : 622 - 626
  • [23] Thermodynamic study on the chemical vapor deposition of boron nitride from the BCl3-NH3-H2 system
    Ren, Haitao
    Zhang, Litong
    Su, Kehe
    Zeng, Qingfeng
    Cheng, Laifei
    THEORETICAL CHEMISTRY ACCOUNTS, 2014, 133 (11)
  • [24] MOLYBDENUM CARBIDE POWDERS OBTAINED FROM THE VAPOR-PHASE REACTION OF THE MOCL4-CH4-H2 SYSTEM
    HOJO, J
    TAJIKA, M
    KATO, A
    JOURNAL OF THE LESS-COMMON METALS, 1979, 66 (02): : 151 - 161
  • [25] Thermodynamic study on co-deposition of ZrB2-SiC from ZrCl4-BCl3-CH3SiCl3-H2-Ar system
    Deng, Juanli
    Cheng, Laifei
    Zheng, Guopeng
    Su, Kehe
    Zhang, Litong
    THIN SOLID FILMS, 2012, 520 (23) : 7030 - 7034
  • [26] 以BCl3-CH4-H2为前驱体、化学气相沉积制备BxC凝聚相产物的热力学研究(英文)
    孙国栋
    邓娟利
    李辉
    张青
    稀有金属材料与工程, 2015, 44 (04) : 826 - 829
  • [27] Silicon Carbide Whiskers Synthesized from SiO2-CH4-Na3AlF6 system
    T. Hashishin
    Y. Kaneko
    H. Iwanaga
    Y. Yamamoto
    Journal of Materials Science, 1999, 34 : 2189 - 2192
  • [28] Silicon carbide whiskers synthesized from SiO2-CH4-Na3AlF6 system
    Hashishin, T
    Kaneko, Y
    Iwanaga, H
    Yamamoto, Y
    JOURNAL OF MATERIALS SCIENCE, 1999, 34 (09) : 2189 - 2192
  • [29] Silicon carbide whiskers synthesized from SiO2-CH4-Na3AlF6 system
    Graduate Course of Material Science and Engineering, Faculty of Science and Engineering, Ritsumeikan University, Japan
    不详
    不详
    J Mater Sci, 9 (2189-2192):
  • [30] SELECTIVE GROWTH OF BORON-CARBIDE, B4C, USING REACTIVE CHEMICAL VAPOR-DEPOSITION - A STUDY OF THE BCL3-H2-C(GRAPHITE) SYSTEM
    VINCENT, H
    MOURICHOUX, H
    SCHARFF, JP
    VINCENT, C
    BOUIX, J
    THERMOCHIMICA ACTA, 1991, 182 (02) : 253 - 272