Birefringence and excitonic spectra of TlGaS2 crystals

被引:6
|
作者
Stamov, I. G. [1 ]
Syrbu, N. N. [2 ]
Ursaki, V. V. [3 ]
Zalamai, V. V. [3 ]
机构
[1] Tiraspol State Corp Univ, MD-3300 Tiraspol, Moldova
[2] Tech Univ Moldova, Kishinev 2004, Moldova
[3] Moldavian Acad Sci, Inst Appl Phys, Kishinev 2028, Moldova
关键词
Semiconductor compound; Optical constants; Excitons; Band structure; BAND-STRUCTURE; SINGLE-CRYSTALS; INCOMMENSURATE PHASE; TRANSITIONS; BETA-TLINS2; DISPERSION; COMPOUND; TLINS2;
D O I
10.1016/j.optcom.2013.02.019
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
The anisotropy of transmission spectra was investigated in TlGaS2 crystals. An intensive transmission line was found in samples placed between two crossed polarizers. Ground and excited states of excitons Were detected in reflectivity spectra of TlGaS2 crystals measured in E vertical bar vertical bar a and E vertical bar vertical bar b polarizations. The reflection spectra of excitons were calculated according to dispersion equations, and the main parameters of excitons and energy bands were determined in the center of the Brillouin zone. The refractive indices n(a) and n(b) were estimated for E vertical bar vertical bar a and E vertical bar vertical bar b polarizations. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码:145 / 149
页数:5
相关论文
共 50 条
  • [21] THE INFLUENCE OF MAGNETIC-FIELDS ON THE PHOTOLUMINESCENCE OF TLGAS2 CRYSTALS
    SALAEV, EI
    ABUTALYBOV, GI
    AGEKIAN, VF
    DOKLADY AKADEMII NAUK SSSR, 1986, 287 (02): : 334 - 337
  • [22] TlGaS2和TlGaS2:Er3+单晶的光谱研究
    巢毅敏,赵建国
    江苏石油化工学院学报, 1996, (03) : 21 - 26
  • [23] Frequency dispersion of dielectric coefficients of layered TlGaS2 single crystals
    Mustafaeva, SN
    PHYSICS OF THE SOLID STATE, 2004, 46 (06) : 1008 - 1010
  • [24] Effect of gamma radiation on the permittivity and electrical conductivity of TlGaS2 crystals
    Sheleg, AU
    Iodkovskaya, KV
    Kurilovich, NF
    PHYSICS OF THE SOLID STATE, 2003, 45 (01) : 69 - 72
  • [25] Frequency dispersion of dielectric coefficients of layered TlGaS2 single crystals
    S. N. Mustafaeva
    Physics of the Solid State, 2004, 46 : 1008 - 1010
  • [26] Low-temperature photoluminescence spectra of layered semiconductor TlGaS2
    Gasanly, NM
    Aydinli, A
    Bek, A
    Yilmaz, I
    SOLID STATE COMMUNICATIONS, 1998, 105 (01) : 21 - 24
  • [27] INVESTIGATION OF OPTICAL AND PHOTOELECTRIC PROPERTIES OF TLGAS2 SINGLE-CRYSTALS
    BAKHYSHOV, AE
    KHALAFOV, ZD
    AKHMEDOV, AM
    SALMANOV, VM
    TAGIROV, VI
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (10): : 1163 - 1164
  • [28] EXCITON-STATES IN TLGAS2
    GUSEINOV, GD
    GORBAN, IS
    GUBANOV, VA
    BELYI, NM
    GUSEINOV, SG
    BOBYR, AV
    KAZYMOV, SB
    FIZIKA TVERDOGO TELA, 1988, 30 (08): : 2551 - 2553
  • [29] Effect of gamma radiation on the permittivity and electrical conductivity of TlGaS2 crystals
    A. U. Sheleg
    K. V. Iodkovskaya
    N. F. Kurilovich
    Physics of the Solid State, 2003, 45 : 69 - 72
  • [30] TlGaS2和TlGaS2∶Er3+单晶的光致发光性质
    巢毅敏
    赵建国
    功能材料, 1996, (03) : 27 - 30