共 50 条
- [41] High-mobility field-effect transistors based on single-crystalline ZnO channels [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 44 (37-41): : L1193 - L1195
- [46] Theory of the field-effect mobility in amorphous organic transistors [J]. PHYSICAL REVIEW B, 1998, 57 (20) : 12964 - 12967
- [50] High-Mobility Holes in Dual-Gated WSe2 Field-Effect Transistors [J]. ACS NANO, 2015, 9 (10) : 10402 - 10410