Dislocation density of MBE grown Hg1-xCdxTe on ZnCdTe substrates

被引：0
|
作者：
Wu, Y [1 ]
Yu, MF
Chen, L
Qiao, YM
Yang, JR
He, L
机构：
[1] Chinese Acad Sci, Shanghai Inst Tech Phys, Res Ctr Adv Mat & Devices, Shanghai 200083, Peoples R China
[2] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China
来源：
JOURNAL OF INFRARED AND MILLIMETER WAVES | 2002年 / 21卷 / 01期
关键词：
MBE; Hg1-xCdxTe; dislocation density;
D O I：
暂无
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
The dislocation density of MBE grown Hg1 - x Cd-x Te on ZnCdTe substrates was studied. It was found that the dislocation density in Hg1 - x Cd-x Te was sensitive to the damage layers of ZnCdTe substrates, growth conditions of HgCdTc as well as compositions. By optimizing the substrate preparation procedures and growth conditions, the averaged EPD value of 4.2 x 10(5)cm(-2) with the standard deviation of 3.5 x 10(5)cm(-2) was obtained, close to the dislocation density limit of substrate. The reproducibility was good with a yield of 73. 7 % as screened by dislocation density. The results should be able to meet the requirements for FPAs of high performance.
引用
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页码：23 / 27
页数：5
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