SUBSTRATE ORIENTATION AND MERCURY FLUX EFFECTS ON THE MBE GROWTH OF HG1-XCDXTE

被引：0
|
作者：
WU, OK [1 ]
SHIRLAND, FA [1 ]
BAUKUS, JP [1 ]
HUNTER, T [1 ]
机构：
[1] PHILIPS LABS,BRIARCLIFF MANOR,NY 10510
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1987年 / 16卷 / 04期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：A24 / A24
页数：1
相关论文
共 50 条
  • [1] MERCURY DIFFUSION IN HG1-XCDXTE
    ARCHER, N
    PALFREY, H
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1991, 20 (06) : 419 - 424
  • [2] MERCURY DIFFUSION IN HG1-XCDXTE
    ARCHER, N
    PALFREY, H
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1990, 19 (07) : 21 - 22
  • [3] MBE Growth of Hg1-xCdxTe on Cadmium Zinc Telluride Substrates
    Garg, Arun Kumar
    Kumar, Shiv
    Tanwar, Arun
    Rana, S. S.
    Tyagi, S.
    Dhar, Vikram
    [J]. PHYSICS OF SEMICONDUCTOR DEVICES, 2014, : 859 - 864
  • [4] MBE P-TYPE HG1-XCDXTE GROWN ON THE (110) ORIENTATION
    ARIAS, JM
    SHIN, SH
    GERTNER, ER
    [J]. JOURNAL OF CRYSTAL GROWTH, 1988, 86 (1-4) : 362 - 366
  • [5] Optimization of the MBE growth of Hg1-xCdxTe for advanced infrared applications
    Vydyanath, HR
    Wijewarnasuriya, PS
    Sivananthan, S
    Nathan, V
    [J]. INFRARED DETECTORS AND FOCAL PLANE ARRAYS V, 1998, 3379 : 572 - 576
  • [6] Arsenic incorporation in MBE grown Hg1-xCdxTe
    Grein, CH
    Garland, JW
    Sivananthan, S
    Wijewarnasuriya, PS
    Aqariden, F
    Fuchs, M
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1999, 28 (06) : 789 - 792
  • [7] Growth and physics of Hg1-xCdxTe and type IIIHgTe/Hg1-xCdxTe heterostructures
    Becker, CR
    Zhang, XC
    Ortner, K
    Schmidt, J
    Pfeuffer-Jeschke, A
    Latussek, V
    Landwehr, G
    [J]. PROCEEDINGS OF THE 10TH INTERNATIONAL CONFERENCE ON NARROW GAP SEMICONDUCTORS AND RELATED SMALL ENERGY PHENOMENA, PHYSICS AND APPLICATIONS, 2001, 2 : 61 - 64
  • [8] Observation of prevalence of quasi-equilibrium in the MBE growth of Hg1-xCdxTe
    Vydyanath, HR
    Aqariden, F
    Wijewarnasuriya, PS
    Sivananthan, S
    Nathan, V
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1998, 27 (06) : 507 - 509
  • [9] Mercury vacancy equilibria in Hg1-xCdxTe
    Neubert, M
    Jacobs, K
    KrauseRehberg, R
    Abgarjan, T
    Gille, P
    Hoerstel, W
    [J]. JOURNAL OF APPLIED PHYSICS, 1996, 79 (10) : 7563 - 7569
  • [10] Epitaxial growth of Hg1-xCdxTe
    Duric, ZG
    Jovic, VB
    [J]. ADVANCED MATERIALS FOR HIGH TECHNOLOGY APPLICATIONS, 1996, 214 : 57 - 64
12345