Electron transport in InAs/AlGaSb ballistic rectifiers

被引：3

作者：

Maemoto, Toshihiko ^{[1
]}

Koyama, Masatoshi ^{[1
]}

Furukawa, Masashi ^{[1
]}

Takahashi, Hiroshi ^{[1
]}

Sasa, Shigehiko ^{[1
]}

Inoue, Masataka ^{[1
]}

机构：

[1] New Mat Res Ctr, Osaka Inst Technol, 5-16-1 Ohmiya, Osaka 5358585, Japan

来源：

SEVENTH INTERNATIONAL CONFERENCE ON NEW PHENOMENA IN MESOSCOPIC STRUCTURES AND FIFTH INTERNATIONAL CONFERENCE ON SURFACES AND INTERFACES OF MESOSCOPIC DEVICES, 2005 | 2006年 / 38卷

关键词：

D O I：

10.1088/1742-6596/38/1/028

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Nonlinear transport properties of a ballistic rectifier fabricated from InAs/AlGaSb heterostructures are reported. The operation of the ballistic rectifier is based on the guidance of carriers by a square anti-dot structure. The structure was defined by electron beam lithography and wet chemical etching. The DC characteristics and magneto-transport properties of the ballistic rectifier have been measured at 77 K and 4.2 K. Rectification effects relying on the ballistic transport were observed. From the four-terminal resistance measured at low magnetic fields, we also observed magneto-resistance fluctuations corresponding to the electron trajectories and symmetry-breaking electron scattering, which are influenced by the magnetic field strength.

引用

页码：112 / +

页数：2

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