InAs/AlGaSb quantum cnscade lasers

被引：0
|
作者：
Ohtani, K [1 ]
Ohno, H [1 ]
机构：
[1] Tohoku Univ, Elect Commun Res Inst, Lab Nanoelect & Spintron, Aoba Ku, Sendai, Miyagi 9808577, Japan
来源：
2005 CONFERENCE ON LASERS & ELECTRO-OPTICS (CLEO), VOLS 1-3 | 2005年
关键词：
D O I：
暂无
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We report our recent experimental results on mid-infrared InAs/AlGaSb quantum cascade lasers. InAs/AlGaSb superlattice structures that provide large oscillator strength are used as active layers. Observed minimum threshold current density is 0.42kA/cm(2) and the maximum operation temperature is 270K.
引用
收藏
页码：244 / 247
页数：4
相关论文
共 50 条
  • [1] Mid-infrared InAs/AlGaSb superlattice quantum-cascade lasers
    Ohtani, K
    Fujita, K
    Ohno, H
    [J]. APPLIED PHYSICS LETTERS, 2005, 87 (21) : 1 - 3
  • [2] ELECTRON ACCUMULATION IN ALGASB/INAS/ALGASB QUANTUM-WELL SYSTEM
    IDESHITA, S
    FURUKAWA, A
    MOCHIZUKI, Y
    MIZUTA, M
    [J]. APPLIED PHYSICS LETTERS, 1992, 60 (20) : 2549 - 2551
  • [3] Magnetotransport in InAs/AlGaSb open quantum dots
    Maemoto, T
    Kobayashi, T
    Karasaki, T
    Kitamura, Y
    Kita, T
    Sasa, S
    Inoue, M
    Ishibashi, K
    Aoyagi, Y
    [J]. PROCEEDINGS OF THE 10TH INTERNATIONAL CONFERENCE ON NARROW GAP SEMICONDUCTORS AND RELATED SMALL ENERGY PHENOMENA, PHYSICS AND APPLICATIONS, 2001, 2 : 184 - 186
  • [4] Fabrication and characterization of InAs/AlGaSb quantum wire transistors
    Maemoto, T
    Yamamoto, H
    Konami, M
    Sasa, S
    Inoue, M
    [J]. 1998 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS, 1998, : 667 - 670
  • [5] High field transport properties of InAs/AlGaSb quantum wires
    Sasa, S
    Sugihara, T
    Tada, K
    Izumiya, S
    Yamamoto, Y
    Inoue, M
    [J]. PHYSICA B, 1996, 227 (1-4): : 363 - 366
  • [6] Above room-temperature operation of InAs/AlGaSb superlattice quantum cascade lasers emitting at 12 μm
    Ohtani, K.
    Moriyasu, Y.
    Ohnishi, H.
    Ohno, H.
    [J]. APPLIED PHYSICS LETTERS, 2007, 90 (26)
  • [7] Magnetotransport in an InAs/AlGaSb quantum wire with a weak periodic potential
    Maemoto, T
    Ichiu, M
    Ohya, A
    Sasa, S
    Inoue, M
    Ishibashi, K
    Aoyagi, Y
    [J]. PHYSICA B, 1999, 272 (1-4): : 110 - 113
  • [8] Carrier recombination dynamics in a (GaInSb/InAs)/AlGaSb superlattice multiple quantum well
    McCahon, SW
    Anson, SA
    Jang, DJ
    Flatte, ME
    Boggess, TF
    Chow, DH
    Hasenberg, TC
    Grein, CH
    [J]. APPLIED PHYSICS LETTERS, 1996, 68 (15) : 2135 - 2137
  • [9] InAs/GaAs quantum dot lasers
    Schmidt, OG
    Kirstaedter, N
    Ledentsov, NN
    Bimberg, D
    Ustinov, VM
    Egorov, AY
    Zhukov, AE
    Maximov, MV
    Kopev, PS
    Alferov, ZI
    [J]. 1996 EIGHTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, 1996, : 727 - 730
  • [10] Quantum-mechanical displacement sensing using InAs/AlGaSb micromechanical cantilevers
    Yamaguchi, H
    Miyashita, S
    Hirayama, Y
    [J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2004, 21 (2-4): : 1053 - 1056
12345