Formation of polymers in TMGa/NH3/H2 system under GaN growth

被引：13
|
作者：
Hirako, A
Ohkawa, K
机构：
[1] Japan Sci & Technol Agcy, NAKAMURA Inhomogeneous Crystal Project, Shinjuku Ku, Tokyo 1628601, Japan
[2] Tokyo Univ Sci, Dept Appl Phys, Shinjuku Ku, Tokyo 1628601, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 2006年 / 289卷 / 02期
关键词：
computer simulation; metalorganic vapor phase epitaxy; nitrides; semiconducting gallium compounds;
D O I：
10.1016/j.jcrysgro.2005.11.125
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We report analysis of gas-phase chemistry and the generation pathways of polymers in a horizontal reactor under metalorganic vaporphase epitaxy of GaN films by using computational fluid dynamics simulations. The simulation model considered radiative heat transfer and the reaction model of TMGa/NH3/H-2 system, including the formation of polymers such as [Ga-N](n) and [MMGaNH](n) (n = 2-6). It was found that Ga-N polymers are generated at a temperature region about 700 K, and that the temperature is the boundary between [Ga-N](2) dissociation ([Ga-N](2) -> Ga-N) and Ga-N polymerization (such as [Ga-N](2) -> [Ga-N](3-6)). (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：428 / 432
页数：5
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