Preparation of films of vitreous solid electrolyte (GeSe2)30(Sb2Se3)30(AgI)40 using laser ablation method

被引：4

作者：

Tveryanovich, Yu. S. ^{[1
]}

Fokina, S. V. ^{[1
]}

Borisov, E. N. ^{[1
]}

Tomaev, V. V. ^{[1
]}

机构：

[1] St Petersburg State Univ, Inst Chem, St Petersburg 199034, Russia

来源：

GLASS PHYSICS AND CHEMISTRY | 2015年 / 41卷 / 04期

基金：

俄罗斯基础研究基金会;

关键词：

thin films; chalcogenide glass; laser ablation; ionic conductance;

D O I：

10.1134/S1087659615040173

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The films of chalcogenide glass in the GeSe2-Sb2Se3-AgI system are obtained by the laser ablation method. A comparison of the results of the elemental composition and temperature dependences of the electroconductance for monolithic glass and the films obtained by laser ablation has shown their identity. The X-ray phase analysis confirmed the film's amorphism. The electron microscopic study of the surface and a cleavage of the film indicate its homogeneity and the absence of defects.

引用

页码：440 / 442

页数：3

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