Preparation of films of vitreous solid electrolyte (GeSe2)30(Sb2Se3)30(AgI)40 using laser ablation method

被引：4
|
作者：
Tveryanovich, Yu. S. [1 ]
Fokina, S. V. [1 ]
Borisov, E. N. [1 ]
Tomaev, V. V. [1 ]
机构：
[1] St Petersburg State Univ, Inst Chem, St Petersburg 199034, Russia
来源：
GLASS PHYSICS AND CHEMISTRY | 2015年 / 41卷 / 04期
基金：
俄罗斯基础研究基金会;
关键词：
thin films; chalcogenide glass; laser ablation; ionic conductance;
D O I：
10.1134/S1087659615040173
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The films of chalcogenide glass in the GeSe2-Sb2Se3-AgI system are obtained by the laser ablation method. A comparison of the results of the elemental composition and temperature dependences of the electroconductance for monolithic glass and the films obtained by laser ablation has shown their identity. The X-ray phase analysis confirmed the film's amorphism. The electron microscopic study of the surface and a cleavage of the film indicate its homogeneity and the absence of defects.
引用
收藏
页码：440 / 442
页数：3
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