RADIAL BULK-MODE VIBRATIONS IN A GATE-ALL-AROUND SILICON NANOWIRE TRANSISTOR

被引：0

作者：

Ziaei-Moayyed, M. ^{[1
]}

Resnick, P. ^{[1
]}

Draper, B. ^{[1
]}

Okandan, M. ^{[1
]}

机构：

[1] Sandia Natl Labs, Albuquerque, NM 87185 USA

来源：

2012 IEEE 25TH INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS (MEMS) | 2012年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports the radial bulk-mode vibrations in a gate-all-around (GAA) silicon nanowire (SiNW) transistor at 25.3GHz, with a quality factor of similar to 850 measured in air. The radial bulk-mode resonance is excited capacitively in the SiNW using the surrounding gate and gate dielectric as the transducer; the output is sensed piezoresistively by modulating the drain current in SiNW. The SiNWs are defined using standard lithography in a top-down front-end CMOS process, which allows for resonators with different frequencies to be fabricated on the same chip.

引用

页数：4

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