RADIAL BULK-MODE VIBRATIONS IN A GATE-ALL-AROUND SILICON NANOWIRE TRANSISTOR

被引：0
|
作者：
Ziaei-Moayyed, M. [1 ]
Resnick, P. [1 ]
Draper, B. [1 ]
Okandan, M. [1 ]
机构：
[1] Sandia Natl Labs, Albuquerque, NM 87185 USA
来源：
2012 IEEE 25TH INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS (MEMS) | 2012年
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper reports the radial bulk-mode vibrations in a gate-all-around (GAA) silicon nanowire (SiNW) transistor at 25.3GHz, with a quality factor of similar to 850 measured in air. The radial bulk-mode resonance is excited capacitively in the SiNW using the surrounding gate and gate dielectric as the transducer; the output is sensed piezoresistively by modulating the drain current in SiNW. The SiNWs are defined using standard lithography in a top-down front-end CMOS process, which allows for resonators with different frequencies to be fabricated on the same chip.
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页数：4
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