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- [1] BSIM-IMG: Compact Model for RF-SOI MOSFETs2015 73RD ANNUAL DEVICE RESEARCH CONFERENCE (DRC), 2015, : 279 - 280Kushwaha, Pragya论文数: 0 引用数: 0 h-index: 0机构: Indian Inst Technol Kanpur, Dept Elect Engn, Nanolab, Kanpur, Uttar Pradesh, India Indian Inst Technol Kanpur, Dept Elect Engn, Nanolab, Kanpur, Uttar Pradesh, IndiaAgarwal, Harshit论文数: 0 引用数: 0 h-index: 0机构: Indian Inst Technol Kanpur, Dept Elect Engn, Nanolab, Kanpur, Uttar Pradesh, India Indian Inst Technol Kanpur, Dept Elect Engn, Nanolab, Kanpur, Uttar Pradesh, IndiaKhandelwal, Sourabh论文数: 0 引用数: 0 h-index: 0机构: Univ Calif Berkeley, Elect Engn & Comp Sci, Berkeley, CA 94720 USA Indian Inst Technol Kanpur, Dept Elect Engn, Nanolab, Kanpur, Uttar Pradesh, IndiaDuarte, Juan-Pablo论文数: 0 引用数: 0 h-index: 0机构: Univ Calif Berkeley, Elect Engn & Comp Sci, Berkeley, CA 94720 USA Indian Inst Technol Kanpur, Dept Elect Engn, Nanolab, Kanpur, Uttar Pradesh, IndiaMedury, Aditya论文数: 0 引用数: 0 h-index: 0机构: Univ Calif Berkeley, Elect Engn & Comp Sci, Berkeley, CA 94720 USA Indian Inst Technol Kanpur, Dept Elect Engn, Nanolab, Kanpur, Uttar Pradesh, IndiaHu, Chenming论文数: 0 引用数: 0 h-index: 0机构: Univ Calif Berkeley, Elect Engn & Comp Sci, Berkeley, CA 94720 USA Indian Inst Technol Kanpur, Dept Elect Engn, Nanolab, Kanpur, Uttar Pradesh, IndiaChauhan, Yogesh S.论文数: 0 引用数: 0 h-index: 0机构: Indian Inst Technol Kanpur, Dept Elect Engn, Nanolab, Kanpur, Uttar Pradesh, India Indian Inst Technol Kanpur, Dept Elect Engn, Nanolab, Kanpur, Uttar Pradesh, India
- [2] BSIM-IMG: A Compact Model for Ultrathin-Body SOI MOSFETs With Back-Gate ControlIEEE TRANSACTIONS ON ELECTRON DEVICES, 2012, 59 (08) : 2019 - 2026Khandelwal, Sourabh论文数: 0 引用数: 0 h-index: 0机构: Norwegian Univ Sci & Technol, Dept Elect & Telecommun, N-7034 Trondheim, Norway Norwegian Univ Sci & Technol, Dept Elect & Telecommun, N-7034 Trondheim, NorwayChauhan, Yogesh Singh论文数: 0 引用数: 0 h-index: 0机构: Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA Norwegian Univ Sci & Technol, Dept Elect & Telecommun, N-7034 Trondheim, NorwayLu, Darsen D.论文数: 0 引用数: 0 h-index: 0机构: Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA Norwegian Univ Sci & Technol, Dept Elect & Telecommun, N-7034 Trondheim, NorwayVenugopalan, Sriramkumar论文数: 0 引用数: 0 h-index: 0机构: Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA Norwegian Univ Sci & Technol, Dept Elect & Telecommun, N-7034 Trondheim, NorwayUl Karim, Muhammed Ahosan论文数: 0 引用数: 0 h-index: 0机构: Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA Norwegian Univ Sci & Technol, Dept Elect & Telecommun, N-7034 Trondheim, NorwaySachid, Angada Bangalore论文数: 0 引用数: 0 h-index: 0机构: Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA Norwegian Univ Sci & Technol, Dept Elect & Telecommun, N-7034 Trondheim, NorwayNguyen, Bich-Yen论文数: 0 引用数: 0 h-index: 0机构: Soitec, Peabody, MA 01960 USA Norwegian Univ Sci & Technol, Dept Elect & Telecommun, N-7034 Trondheim, NorwayRozeau, Olivier论文数: 0 引用数: 0 h-index: 0机构: CEA, LETI, F-38054 Grenoble, France Norwegian Univ Sci & Technol, Dept Elect & Telecommun, N-7034 Trondheim, NorwayFaynot, Olivier论文数: 0 引用数: 0 h-index: 0机构: CEA, LETI, F-38054 Grenoble, France Norwegian Univ Sci & Technol, Dept Elect & Telecommun, N-7034 Trondheim, NorwayNiknejad, Ali M.论文数: 0 引用数: 0 h-index: 0机构: Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA Norwegian Univ Sci & Technol, Dept Elect & Telecommun, N-7034 Trondheim, NorwayHu, Chenming Calvin论文数: 0 引用数: 0 h-index: 0机构: Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA Norwegian Univ Sci & Technol, Dept Elect & Telecommun, N-7034 Trondheim, Norway
- [3] BSIM-IMG: Advanced Model for FDSOI Transistors with Back Channel Inversion2020 IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM 2020), 2020,Agarwal, H.论文数: 0 引用数: 0 h-index: 0机构: Indian Inst Technol Jodhpur, Karwar, India Indian Inst Technol Jodhpur, Karwar, IndiaKushwaha, P.论文数: 0 引用数: 0 h-index: 0机构: Univ Calif Berkeley, Berkeley, CA 94720 USA Indian Inst Technol Jodhpur, Karwar, IndiaDasgupta, A.论文数: 0 引用数: 0 h-index: 0机构: Univ Calif Berkeley, Berkeley, CA 94720 USA Indian Inst Technol Jodhpur, Karwar, IndiaY-Kao, M.论文数: 0 引用数: 0 h-index: 0机构: Univ Calif Berkeley, Berkeley, CA 94720 USA Indian Inst Technol Jodhpur, Karwar, IndiaMorshed, T.论文数: 0 引用数: 0 h-index: 0机构: Globalfoundries Inc, Compact Modeling & Characterizat Div, Santa Clara, CA USA Indian Inst Technol Jodhpur, Karwar, IndiaWorkman, G.论文数: 0 引用数: 0 h-index: 0机构: Globalfoundries Inc, Compact Modeling & Characterizat Div, Santa Clara, CA USA Indian Inst Technol Jodhpur, Karwar, IndiaShanbhag, K.论文数: 0 引用数: 0 h-index: 0机构: Globalfoundries Inc, Compact Modeling & Characterizat Div, Santa Clara, CA USA Indian Inst Technol Jodhpur, Karwar, IndiaLi, X.论文数: 0 引用数: 0 h-index: 0机构: Globalfoundries Inc, Compact Modeling & Characterizat Div, Santa Clara, CA USA Indian Inst Technol Jodhpur, Karwar, IndiaVinothkumar, V.论文数: 0 引用数: 0 h-index: 0机构: Globalfoundries Inc, Compact Modeling & Characterizat Div, Santa Clara, CA USA Indian Inst Technol Jodhpur, Karwar, IndiaChauhan, Y. S.论文数: 0 引用数: 0 h-index: 0机构: Indian Inst Technol Kanpur, Kanpur, Uttar Pradesh, India Indian Inst Technol Jodhpur, Karwar, IndiaSalahuddin, S.论文数: 0 引用数: 0 h-index: 0机构: Indian Inst Technol Jodhpur, Karwar, India Indian Inst Technol Jodhpur, Karwar, IndiaHu, C.论文数: 0 引用数: 0 h-index: 0机构: Indian Inst Technol Jodhpur, Karwar, India Indian Inst Technol Jodhpur, Karwar, India
- [4] BSIM-IMG with Improved Surface Potential Calculation Recipe2014 ANNUAL IEEE INDIA CONFERENCE (INDICON), 2014,Kushwaha, Pragya论文数: 0 引用数: 0 h-index: 0机构: Indian Inst Technol, Dept Elect Engn, Kanpur, Uttar Pradesh, India Indian Inst Technol, Dept Elect Engn, Kanpur, Uttar Pradesh, IndiaYadav, Chandan论文数: 0 引用数: 0 h-index: 0机构: Indian Inst Technol, Dept Elect Engn, Kanpur, Uttar Pradesh, India Indian Inst Technol, Dept Elect Engn, Kanpur, Uttar Pradesh, IndiaAgarwal, Harshit论文数: 0 引用数: 0 h-index: 0机构: Indian Inst Technol, Dept Elect Engn, Kanpur, Uttar Pradesh, India Indian Inst Technol, Dept Elect Engn, Kanpur, Uttar Pradesh, IndiaChauhan, Yogesh Singh论文数: 0 引用数: 0 h-index: 0机构: Indian Inst Technol, Dept Elect Engn, Kanpur, Uttar Pradesh, India Indian Inst Technol, Dept Elect Engn, Kanpur, Uttar Pradesh, IndiaSrivatsava, Jandhyala论文数: 0 引用数: 0 h-index: 0机构: IIIT Hyderbad, Hyderabad, Andhra Pradesh, India Indian Inst Technol, Dept Elect Engn, Kanpur, Uttar Pradesh, IndiaKhandelwal, Sourabh论文数: 0 引用数: 0 h-index: 0机构: Univ Calif Berkeley, Elect Engn & Comp Sci, Berkeley, CA 94720 USA Indian Inst Technol, Dept Elect Engn, Kanpur, Uttar Pradesh, IndiaDuarte, Juan Pablo论文数: 0 引用数: 0 h-index: 0机构: Univ Calif Berkeley, Elect Engn & Comp Sci, Berkeley, CA 94720 USA Indian Inst Technol, Dept Elect Engn, Kanpur, Uttar Pradesh, IndiaHu, Chenming论文数: 0 引用数: 0 h-index: 0机构: Univ Calif Berkeley, Elect Engn & Comp Sci, Berkeley, CA 94720 USA Indian Inst Technol, Dept Elect Engn, Kanpur, Uttar Pradesh, India
- [5] RF Modeling of FDSOI Transistors Using Industry Standard BSIM-IMG ModelIEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2016, 64 (06) : 1745 - 1751Kushwaha, Pragya论文数: 0 引用数: 0 h-index: 0机构: Indian Inst Technol, Dept Elect Engn, Nanolab, Kanpur 208016, Uttar Pradesh, India Indian Inst Technol, Dept Elect Engn, Nanolab, Kanpur 208016, Uttar Pradesh, IndiaKhandelwal, Sourabh论文数: 0 引用数: 0 h-index: 0机构: Univ Calif Berkeley, Elect Engn & Comp Sci, Berkeley, CA 94704 USA Indian Inst Technol, Dept Elect Engn, Nanolab, Kanpur 208016, Uttar Pradesh, IndiaDuarte, Juan Pablo论文数: 0 引用数: 0 h-index: 0机构: Univ Calif Berkeley, Elect Engn & Comp Sci, Berkeley, CA 94704 USA Indian Inst Technol, Dept Elect Engn, Nanolab, Kanpur 208016, Uttar Pradesh, IndiaHu, Chenming论文数: 0 引用数: 0 h-index: 0机构: Univ Calif Berkeley, Elect Engn & Comp Sci, Berkeley, CA 94704 USA Indian Inst Technol, Dept Elect Engn, Nanolab, Kanpur 208016, Uttar Pradesh, IndiaChauhan, Yogesh Singh论文数: 0 引用数: 0 h-index: 0机构: Indian Inst Technol, Dept Elect Engn, Nanolab, Kanpur 208016, Uttar Pradesh, India Indian Inst Technol, Dept Elect Engn, Nanolab, Kanpur 208016, Uttar Pradesh, India
- [6] Thermal resistance modeling in FDSOI transistors with industry standard model BSIM-IMGMICROELECTRONICS JOURNAL, 2016, 56 : 171 - 176Kushwaha, Pragya论文数: 0 引用数: 0 h-index: 0机构: Indian Inst Technol, Dept Elect Engn, Nanolab, Kanpur 208016, Uttar Pradesh, India Indian Inst Technol, Dept Elect Engn, Nanolab, Kanpur 208016, Uttar Pradesh, IndiaKrishna, K. Bala论文数: 0 引用数: 0 h-index: 0机构: Indian Inst Technol, Dept Elect Engn, Nanolab, Kanpur 208016, Uttar Pradesh, India Indian Inst Technol, Dept Elect Engn, Nanolab, Kanpur 208016, Uttar Pradesh, IndiaAgarwal, Harshit论文数: 0 引用数: 0 h-index: 0机构: Indian Inst Technol, Dept Elect Engn, Nanolab, Kanpur 208016, Uttar Pradesh, India Indian Inst Technol, Dept Elect Engn, Nanolab, Kanpur 208016, Uttar Pradesh, IndiaKhandelwal, Sourabh论文数: 0 引用数: 0 h-index: 0机构: Univ Calif Berkeley, Elect Engn & Comp Sci, Berkeley, CA 94720 USA Indian Inst Technol, Dept Elect Engn, Nanolab, Kanpur 208016, Uttar Pradesh, IndiaDuarte, Juan-Pablo论文数: 0 引用数: 0 h-index: 0机构: Univ Calif Berkeley, Elect Engn & Comp Sci, Berkeley, CA 94720 USA Indian Inst Technol, Dept Elect Engn, Nanolab, Kanpur 208016, Uttar Pradesh, IndiaHu, Chenming论文数: 0 引用数: 0 h-index: 0机构: Univ Calif Berkeley, Elect Engn & Comp Sci, Berkeley, CA 94720 USA Indian Inst Technol, Dept Elect Engn, Nanolab, Kanpur 208016, Uttar Pradesh, IndiaChauhan, Yogesh Singh论文数: 0 引用数: 0 h-index: 0机构: Indian Inst Technol, Dept Elect Engn, Nanolab, Kanpur 208016, Uttar Pradesh, India Indian Inst Technol, Dept Elect Engn, Nanolab, Kanpur 208016, Uttar Pradesh, India
- [7] Modeling of Threshold Voltage for Operating Point using Industry standard BSIM-IMG Model2016 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2016, : 216 - 219Kushwaha, Pragya论文数: 0 引用数: 0 h-index: 0机构: Indian Inst Technol, Dept Elect Engn, Nanolab, Kanpur, Uttar Pradesh, India Indian Inst Technol, Dept Elect Engn, Nanolab, Kanpur, Uttar Pradesh, IndiaAgarwal, Rahul论文数: 0 引用数: 0 h-index: 0机构: Indian Inst Technol, Dept Elect Engn, Nanolab, Kanpur, Uttar Pradesh, India Indian Inst Technol, Dept Elect Engn, Nanolab, Kanpur, Uttar Pradesh, IndiaAgarwal, Harshit论文数: 0 引用数: 0 h-index: 0机构: Indian Inst Technol, Dept Elect Engn, Nanolab, Kanpur, Uttar Pradesh, India Indian Inst Technol, Dept Elect Engn, Nanolab, Kanpur, Uttar Pradesh, IndiaChauhan, Yogesh Singh论文数: 0 引用数: 0 h-index: 0机构: Indian Inst Technol, Dept Elect Engn, Nanolab, Kanpur, Uttar Pradesh, India Indian Inst Technol, Dept Elect Engn, Nanolab, Kanpur, Uttar Pradesh, IndiaKhandelwal, Sourabh论文数: 0 引用数: 0 h-index: 0机构: Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA Indian Inst Technol, Dept Elect Engn, Nanolab, Kanpur, Uttar Pradesh, IndiaDuarte, Juan P.论文数: 0 引用数: 0 h-index: 0机构: Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA Indian Inst Technol, Dept Elect Engn, Nanolab, Kanpur, Uttar Pradesh, IndiaLin, Yen-Kai论文数: 0 引用数: 0 h-index: 0机构: Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA Indian Inst Technol, Dept Elect Engn, Nanolab, Kanpur, Uttar Pradesh, IndiaChang, Huan-Lin论文数: 0 引用数: 0 h-index: 0机构: Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA Indian Inst Technol, Dept Elect Engn, Nanolab, Kanpur, Uttar Pradesh, IndiaHu, Chenming论文数: 0 引用数: 0 h-index: 0机构: Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA Indian Inst Technol, Dept Elect Engn, Nanolab, Kanpur, Uttar Pradesh, India
- [8] An Exercise of ET/UTBB SOI CMOS Modeling and Simulation with BSIM-IMG2011 IEEE INTERNATIONAL SOI CONFERENCE, 2011,Chen, Qiang论文数: 0 引用数: 0 h-index: 0机构: Accelicon Technol Inc, Cupertino, CA USA Accelicon Technol Inc, Cupertino, CA USAZhong, Xinghua论文数: 0 引用数: 0 h-index: 0机构: Accelicon Technol Inc, Cupertino, CA USA Accelicon Technol Inc, Cupertino, CA USAWun, Yanjun论文数: 0 引用数: 0 h-index: 0机构: Accelicon Technol Inc, Cupertino, CA USA Accelicon Technol Inc, Cupertino, CA USAZhu, Nengyong论文数: 0 引用数: 0 h-index: 0机构: Accelicon Technol Inc, Cupertino, CA USA Accelicon Technol Inc, Cupertino, CA USAHuang, Wei论文数: 0 引用数: 0 h-index: 0机构: Accelicon Technol Inc, Cupertino, CA USA Accelicon Technol Inc, Cupertino, CA USALu, Darsen论文数: 0 引用数: 0 h-index: 0机构: Accelicon Technol Inc, Cupertino, CA USAHu, Chenming论文数: 0 引用数: 0 h-index: 0机构: Accelicon Technol Inc, Cupertino, CA USABich-Yen Nguyen论文数: 0 引用数: 0 h-index: 0机构: Accelicon Technol Inc, Cupertino, CA USAFaynot, Olivier论文数: 0 引用数: 0 h-index: 0机构: Accelicon Technol Inc, Cupertino, CA USA
- [9] Modeling of GeOI and Validation with Ge-CMOS Inverter Circuit using BSIM-IMG Industry Standard Model2016 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2016, : 444 - 447Agarwal, Harshit论文数: 0 引用数: 0 h-index: 0机构: Indian Inst Technol, Kanpur, Uttar Pradesh, India Indian Inst Technol, Kanpur, Uttar Pradesh, IndiaKushwaha, Pragya论文数: 0 引用数: 0 h-index: 0机构: Indian Inst Technol, Kanpur, Uttar Pradesh, India Indian Inst Technol, Kanpur, Uttar Pradesh, IndiaChauhan, Yogesh S.论文数: 0 引用数: 0 h-index: 0机构: Indian Inst Technol, Kanpur, Uttar Pradesh, India Indian Inst Technol, Kanpur, Uttar Pradesh, IndiaKhandelwal, Sourabh论文数: 0 引用数: 0 h-index: 0机构: Univ Calif Berkeley, Berkeley, CA 94720 USA Indian Inst Technol, Kanpur, Uttar Pradesh, IndiaDuarte, Juan P.论文数: 0 引用数: 0 h-index: 0机构: Univ Calif Berkeley, Berkeley, CA 94720 USA Indian Inst Technol, Kanpur, Uttar Pradesh, IndiaLin, Yen-Kai论文数: 0 引用数: 0 h-index: 0机构: Univ Calif Berkeley, Berkeley, CA 94720 USA Indian Inst Technol, Kanpur, Uttar Pradesh, IndiaChang, Huan-Lin论文数: 0 引用数: 0 h-index: 0机构: Univ Calif Berkeley, Berkeley, CA 94720 USA Indian Inst Technol, Kanpur, Uttar Pradesh, IndiaHu, Chenming论文数: 0 引用数: 0 h-index: 0机构: Univ Calif Berkeley, Berkeley, CA 94720 USA Indian Inst Technol, Kanpur, Uttar Pradesh, IndiaWu, Heng论文数: 0 引用数: 0 h-index: 0机构: Purdue Univ, W Lafayette, IN 47907 USA Indian Inst Technol, Kanpur, Uttar Pradesh, IndiaYe, Peide D.论文数: 0 引用数: 0 h-index: 0机构: Purdue Univ, W Lafayette, IN 47907 USA Indian Inst Technol, Kanpur, Uttar Pradesh, India
- [10] RF small-signal modeling of HCI degradation in FDSOI NMOSFET using BSIM-IMG2021 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP (IIRW), 2021, : 33 - 37Gonzalez, Fabio A. Velarde论文数: 0 引用数: 0 h-index: 0机构: Fraunhofer Inst Integrated Circuits IIS, Div Engn Adapt Syst EAS, Dresden, Germany Fraunhofer Inst Integrated Circuits IIS, Div Engn Adapt Syst EAS, Dresden, GermanyLange, Andre论文数: 0 引用数: 0 h-index: 0机构: Fraunhofer Inst Integrated Circuits IIS, Div Engn Adapt Syst EAS, Dresden, Germany Fraunhofer Inst Integrated Circuits IIS, Div Engn Adapt Syst EAS, Dresden, GermanyChohan, Talha论文数: 0 引用数: 0 h-index: 0机构: NaMLab gGmbH, Dresden, Germany Fraunhofer Inst Integrated Circuits IIS, Div Engn Adapt Syst EAS, Dresden, GermanyMikolajick, Thomas论文数: 0 引用数: 0 h-index: 0机构: Tech Univ Dresden, IBM, Dresden, Germany Fraunhofer Inst Integrated Circuits IIS, Div Engn Adapt Syst EAS, Dresden, Germany