Molecular beam epitaxial growth mode transitions on vicinal surfaces

被引：0
|
作者：
Trofimov, VI [1 ]
Medvedev, BK [1 ]
Mokerov, VG [1 ]
Shumyankov, AG [1 ]
机构：
[1] RUSSIAN ACAD SCI, INST RADIO ENGN & ELECTR, MOSCOW 103907, RUSSIA
来源：
EVOLUTION OF EPITAXIAL STRUCTURE AND MORPHOLOGY | 1996年 / 399卷
关键词：
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：47 / 52
页数：6
相关论文
共 50 条
  • [41] Morphological stability in molecular beam epitaxial growth
    Pimpinelli, A
    THEORETICAL AND TECHNOLOGICAL ASPECTS OF CRYSTAL GROWTH, 1998, 276-2 : 223 - 240
  • [42] Epitaxial growth techniques: Molecular beam epitaxy
    Shiraki, Y
    SILICON EPITAXY, 2001, 72 (0C): : 151 - 183
  • [43] Molecular beam epitaxial growth of osmium silicides
    Cottier, R. J.
    Amir, F. Z.
    Zhao, W.
    Hossain, K.
    Gorman, B. P.
    Golding, T. D.
    Anibou, N.
    Donner, W.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2006, 24 (03): : 1488 - 1491
  • [44] Growth of self-assembled epitaxial germanium nanoislands on silicon surfaces by molecular beam epitaxy
    Goswami, DK
    Satpati, B
    Satyam, PV
    Dev, BN
    PHYSICS AT SURFACES AND INTERFACES, 2003, : 93 - 98
  • [45] Growth mode transitions in molecular-beam epitaxy: Theoretical model and experimental verification
    Trofimov, VI
    Park, HS
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2002, 40 (02) : 344 - 348
  • [46] Reconstruction transitions during molecular-beam epitaxy on GaAs(111)B vicinal surfaces studied by scanning electron microscopy
    Ren, HW
    Nishinaga, T
    PHYSICAL REVIEW B, 1996, 54 (16): : 11054 - 11057
  • [47] Reconstruction transitions during molecular-beam epitaxy on GaAs(111)B vicinal surfaces studied by scanning electron microscopy
    Ren, H.-W.
    Nishinaga, T.
    Physical Review B: Condensed Matter, 54 (16):
  • [48] Epitaxial growth of Cr ultrathin films on vicinal and low index Mo(110) surfaces
    Cazacu, A
    Murphy, S
    Shvets, IV
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (3B): : 2212 - 2214
  • [49] Epitaxial growth of ZnS on bare and arsenic-passivated vicinal Si(100) surfaces
    Zhou, XC
    Jiang, S
    Kirk, WP
    JOURNAL OF APPLIED PHYSICS, 1997, 82 (05) : 2251 - 2262
  • [50] NONLINEAR EQUATION FOR DIFFUSION AND ADATOM INTERACTIONS DURING EPITAXIAL-GROWTH ON VICINAL SURFACES
    MYERSBEAGHTON, AK
    VVEDENSKY, DD
    PHYSICAL REVIEW B, 1990, 42 (09): : 5544 - 5554
12345