Morphological stability in molecular beam epitaxial growth

被引:2
|
作者
Pimpinelli, A [1 ]
机构
[1] Univ Blaise Pascal, LASMEA, Clermont Ferrand, France
关键词
MBE; morphological stability; surface morphology; adsorption; desorption; growth steps; kink; growth rate;
D O I
10.4028/www.scientific.net/MSF.276-277.223
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:223 / 240
页数:18
相关论文
共 50 条
  • [1] Nucleation and growth processes in molecular beam epitaxial growth
    Nakahara, H
    Ichikawa, M
    Ichimiya, A
    DEFECT AND DIFFUSION FORUM, 1998, 161 : 65 - 73
  • [2] Phase stability during molecular beam epitaxial growth of CdTe on InSb(111) substrates
    Huerta, J
    López, M
    Zelaya-Angel, O
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (03): : 1716 - 1719
  • [3] Molecular Beam Epitaxial Growth of Topological Insulators
    Chen, Xi
    Ma, Xu-Cun
    He, Ke
    Jia, Jin-Feng
    Xue, Qi-Kun
    ADVANCED MATERIALS, 2011, 23 (09) : 1162 - 1165
  • [4] Epitaxial growth techniques: Molecular beam epitaxy
    Shiraki, Y
    SILICON EPITAXY, 2001, 72 (0C): : 151 - 183
  • [5] Molecular beam epitaxial growth of osmium silicides
    Cottier, R. J.
    Amir, F. Z.
    Zhao, W.
    Hossain, K.
    Gorman, B. P.
    Golding, T. D.
    Anibou, N.
    Donner, W.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2006, 24 (03): : 1488 - 1491
  • [6] MOLECULAR-BEAM EPITAXIAL-GROWTH OF INP
    MATSUSHIMA, Y
    HIROFUJI, Y
    GONDA, S
    MUKAI, S
    KIMATA, M
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (12) : 2321 - 2325
  • [7] MOLECULAR-BEAM EPITAXIAL-GROWTH OF INAS
    YANO, M
    NOGAMI, M
    MATSUSHIMA, Y
    KIMATA, M
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (12) : 2131 - 2137
  • [8] Molecular beam epitaxial growth of BGaAs ternary compounds
    V. K. Gupta
    M. W. Koch
    N. J. Watkins
    Y. Gao
    G. W. Wicks
    Journal of Electronic Materials, 2000, 29 : 1387 - 1391
  • [9] MOLECULAR-BEAM EPITAXIAL-GROWTH OF INP
    MCFEE, JH
    MILLER, BI
    BACHMANN, KJ
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (02) : 259 - 272
  • [10] Molecular Beam Epitaxial Growth and Characterization of Nanoscale ScGaN
    Vafadar, Mohammad Fazel
    Fathabadi, Milad
    Zhao, Songrui
    CRYSTAL GROWTH & DESIGN, 2024, 24 (19) : 7919 - 7924