Tensile strained Ge layers on strain-relaxed Ge1-xSnx/virtual Ge substrates

被引：45

作者：

Takeuchi, Shotaro ^{[1
]}

Sakai, Akira ^{[1
]}

Nakatsuka, Osamu ^{[1
]}

Ogawa, Masaki ^{[2
]}

Zaima, Shigeaki ^{[1
]}

机构：

[1] Nagoya Univ, Grad Sch Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan

[2] Nagoya Univ, EcoTopia Sci Inst, Chikusa Ku, Nagoya, Aichi 4648603, Japan

来源：

THIN SOLID FILMS | 2008年 / 517卷 / 01期

关键词：

Germanium; Tin; Strain; Dislocation;

D O I：

10.1016/j.tsf.2008.08.068

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have grown a tensile-strained Ge layer on a strain-relaxed compositionally step-graded Ge1-xSnx buffer layer using virtual Ge substrates. The degree of strain relaxation along [110] direction of the top Ge0.945Sn0.055 buffer layer is achieved up to 85% and the resultant (110) lattice spacing of the Ge0.945Sn0.055 buffer layer is estimated to be 0.4028 nm. A pseudomorphic Ge layer is successfully grown on the Ge0.945Sn0.055 buffer layer, yielding a tensile strain of 0.68% with respect to the (110) lattice spacing of non-strained Ge. This value exceeds those obtained by other methods based on the thermal expansion coefficient difference and strain-relaxed Ge1-xSnx buffer layer directly grown on Si(001) substrates. (C) 2008 Elsevier B.V. All rights reserved.

引用

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页码：159 / 162

页数：4

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