Electronic instabilities of the two-dimensional Sn/Ge(111) α-phase

被引：14
|
作者：
Avila, J
Huttel, Y
Mascaraque, A
Le Lay, G
Michel, EG
Asensio, MC [1 ]
机构：
[1] CSIC, Inst Ciencia Mat, Madrid 28049, Spain
[2] Ctr Univ Paris Sud, LURE, F-91898 Orsay, France
[3] Univ Autonoma Madrid, Dept Fis Mat Condensada, E-28049 Madrid, Spain
[4] Univ Autonoma Madrid, Inst Ciencia Mat Nicolas Cabrera, E-28049 Madrid, Spain
[5] CNRS, CRMC2, F-13288 Marseille 09, France
[6] Univ Aix Marseille 1, UFR SM, F-13003 Marseille, France
来源：
SURFACE SCIENCE | 1999年 / 433卷
关键词：
charge density wave; electronic structure; germanium; photoemission; tin;
D O I：
10.1016/S0039-6028(99)00149-1
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The Sn/Ge(111) interface presents at room temperature an ordered root 3 x root 3R(30 degrees) surface reconstruction, formed by a submonolayer array of tin adatoms, which reversibly transforms upon cooling into a 3 x 3 structure. Recently, it has been claimed that the formation of a commensurate charge density wave is responsible for this transition. We present high-resolution synchrotron radiation photoemission results which support, instead, that the driving force of the transition is rehybridization: fluctuations in the tin adatom type of bonding freeze-in at low temperature to yield the static long-range ordering of the 3 x 3 ground state which is governed by an ideal 1/2 ratio of the sp(3)/sp(2) hybridization balance. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：327 / 331
页数：5
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