α-Sn phase on Si(111): Spin texture of a two-dimensional Mott state

被引:10
|
作者
Jaeger, M. [1 ]
Brand, C. [1 ,5 ,6 ]
Weber, A. P. [2 ,3 ]
Fanciulli, M. [2 ,3 ]
Dil, J. H. [2 ,3 ]
Pfnuer, H. [1 ]
Tegenkamp, C. [1 ,4 ]
机构
[1] Leibniz Univ Hannover, Inst Festkorperphys, Appelstr 2, D-30167 Hannover, Germany
[2] Ecole Polytech Fed Lausanne, Inst Phys, CH-1015 Lausanne, Switzerland
[3] Paul Scherrer Inst, Photon Sci Div, CH-5232 Villigen, Switzerland
[4] Tech Univ Chemnitz, Inst Phys, Reichenhainer Str 70, D-09126 Chemnitz, Germany
[5] Univ Duisburg Essen, Fak Phys, Lotharstr 1, D-47057 Duisburg, Germany
[6] Univ Duisburg Essen, CENIDE, Lotharstr 1, D-47057 Duisburg, Germany
基金
瑞士国家科学基金会;
关键词
SURFACE; SUPERCONDUCTIVITY;
D O I
10.1103/PhysRevB.98.165422
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The alpha-Sn reconstruction on Si(111) is a prototype system for a two-dimensional Mott phase. In this study we performed spin-resolved photoemission experiments and analyzed in detail the spin structure of this electronically correlated surface state. The analysis of the spin-integrated bands as well as the spin texture of the surface states along different crystallographic directions provide clear evidence for the formation of collinear antiferromagnetic (2 root 3 x root 3) domains, while the Sn reconstruction reveals a (root 3 x root 3) symmetry. The Rashba splitting of the highest occupied Mott state was found to be Delta k = 0.05 angstrom(-1), i.e., the alpha-Sn phase should be termed a weakly spin-orbit coupled Mott system.
引用
收藏
页数:6
相关论文
共 50 条
  • [1] Electronic instabilities of the two-dimensional Sn/Ge(111) α-phase
    Avila, J.
    Huttel, Y.
    Mascaraque, A.
    Le Lay, G.
    Michel, E.G.
    Asensio, M.C.
    Surface Science, 1999, 433 : 327 - 331
  • [2] Electronic instabilities of the two-dimensional Sn/Ge(111) α-phase
    Avila, J
    Huttel, Y
    Mascaraque, A
    Le Lay, G
    Michel, EG
    Asensio, MC
    SURFACE SCIENCE, 1999, 433 : 327 - 331
  • [3] Electronic structure of a two-dimensional alloy:: Sn-Pb-Si on Si(111)
    Di Teodoro, C
    Ressel, B
    Prince, KC
    Cháb, V
    Santucci, S
    Faccani, S
    Profeta, G
    Ottaviano, L
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2004, 16 (21) : 3507 - 3516
  • [4] Criticality and Mott glass phase in a disordered two-dimensional quantum spin system
    Ma, Nvsen
    Sandvik, Anders W.
    Yao, Dao-Xin
    PHYSICAL REVIEW B, 2014, 90 (10)
  • [5] Competing charge ordering and Mott phases in a correlated Sn/Ge(111) two-dimensional triangular lattice
    Cortes, R.
    Tejeda, A.
    Lobo-Checa, J.
    Didiot, C.
    Kierren, B.
    Malterre, D.
    Merino, J.
    Flores, F.
    Michel, E. G.
    Mascaraque, A.
    PHYSICAL REVIEW B, 2013, 88 (12)
  • [6] Mott transition in the two-dimensional flux phase
    Otsuka, Y
    Hatsugai, Y
    PHYSICAL REVIEW B, 2002, 65 (07) : 1 - 4
  • [7] Structural phase transitions in two-dimensional systems: Pb/Ge(111) and Sn/Ge(111)
    Cano, A
    Levanyuk, AR
    Michel, EG
    ZEITSCHRIFT FUR KRISTALLOGRAPHIE, 2005, 220 (08): : 663 - 671
  • [8] Experimental and Theoretical Evidence of a Highly Ordered Two-Dimensional Sn/Ag Alloy on Si(111)
    Osiecki, Jacek R.
    Sohail, H. M.
    Eriksson, P. E. J.
    Uhrberg, R. I. G.
    PHYSICAL REVIEW LETTERS, 2012, 109 (05)
  • [9] Two-dimensional facet nucleation and growth on Si(111)
    Liu, DJ
    Weeks, JD
    Johnson, MD
    Williams, ED
    PHYSICAL REVIEW B, 1997, 55 (12): : 7653 - 7659
  • [10] How can the unstable two-dimensional Sn2Bi be experimentally realized on Si(111)?
    Peng, Jing
    Zhuang, Chen
    Gu, Haoming
    Zhu, Liyan
    Zhang, Tingting
    JOURNAL OF NANOPARTICLE RESEARCH, 2022, 24 (03)