Electronic instabilities of the two-dimensional Sn/Ge(111) α-phase

被引:14
|
作者
Avila, J
Huttel, Y
Mascaraque, A
Le Lay, G
Michel, EG
Asensio, MC [1 ]
机构
[1] CSIC, Inst Ciencia Mat, Madrid 28049, Spain
[2] Ctr Univ Paris Sud, LURE, F-91898 Orsay, France
[3] Univ Autonoma Madrid, Dept Fis Mat Condensada, E-28049 Madrid, Spain
[4] Univ Autonoma Madrid, Inst Ciencia Mat Nicolas Cabrera, E-28049 Madrid, Spain
[5] CNRS, CRMC2, F-13288 Marseille 09, France
[6] Univ Aix Marseille 1, UFR SM, F-13003 Marseille, France
关键词
charge density wave; electronic structure; germanium; photoemission; tin;
D O I
10.1016/S0039-6028(99)00149-1
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The Sn/Ge(111) interface presents at room temperature an ordered root 3 x root 3R(30 degrees) surface reconstruction, formed by a submonolayer array of tin adatoms, which reversibly transforms upon cooling into a 3 x 3 structure. Recently, it has been claimed that the formation of a commensurate charge density wave is responsible for this transition. We present high-resolution synchrotron radiation photoemission results which support, instead, that the driving force of the transition is rehybridization: fluctuations in the tin adatom type of bonding freeze-in at low temperature to yield the static long-range ordering of the 3 x 3 ground state which is governed by an ideal 1/2 ratio of the sp(3)/sp(2) hybridization balance. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:327 / 331
页数:5
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