ELECTRIC FIELD INDUCED RESISTANCE SWITCHING AND MAGNETIC SWITCHING PROPERTIES OF Fe70Ga30 NANO THIN FILMS

Fe70Ga30 magnetic nano thin films of different thicknesses were successfully fabricated by ion beam deposition coating on Si/SiO2 substrates. The crystal structure of Fe(70)Gn(30) magnetic nano thin films were characterized by Grazing incidence X-ray diffraction (GIXRD). Surface morphology is studied using Atomic Force Microscopy (AFM). The magnetic properties of nano thin films have been measured by Vibrating Sample Magnetometer (VSM). The result reveals that the nano thin films have good soft magnetic properties. We measured the current-voltage (I-V) curves of Fe70Ga30 nano thin films, the behavior of resistance switching by more than an order of magnitude was obtained .The measurement performed on Fe70Ga30 nano thin films reveal that the resistant switching behavior is reversible and the transformation occurs between high (low) resistance states. The manipulation could be attributed to the Coulomb blockade effect. The existence of anomalous Hall effect was found during the Hall effect test on the nano thin films surface. The surface carrier density of Fe70Ga30 nano thin films changed when Hall effect test was performed resulting in magnetic switching.