Resistance switching of NiO-TiO2 nano-composite thin films

被引：0
|
作者：
Li J.-C. [1 ]
Li R.-X. [1 ]
Zheng C.-P. [1 ]
机构：
[1] School of Mechanical Engineering & Automation, Northeastern University, Shenyang
来源：
Dongbei Daxue Xuebao/Journal of Northeastern University | 2016年 / 37卷 / 05期
关键词：
Metal-oxide composite thin film; Oxygen vacancy; Resistance switching; Sol-gel method;
D O I：
10.3969/j.issn.1005-3026.2016.05.017
中图分类号：
学科分类号：
摘要：
The NiO-TiO2 (NTO) nanocomposite thin films with different n(Ni)/n(Ti) ratios were fabricated through sol-gel method. The current-voltage measurements indicated that the NTO films exhibit bipolar resistance switching behavior with low threshold voltage, high on/off ratio and long retention time. The low resistance state was governed by the Ohmic mechanism, while the high resistance state can be described with the oxygen-vacancy-related space charge limited conduction. The switching mechanism is related to the charge trapping/detrapping process. © 2016, Editorial Department of Journal of Northeastern University. All right reserved.
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页码：688 / 691
页数：3
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