Diverse instability behaviors for n-channel low-temperature polycrystalline silicon thin film transistors

被引：0

作者：

Yu, Cheng-Ho ^{[1
]}

Tai, Ya-Hsiang ^{[1
]}

Teng, Te-Hung ^{[1
]}

机构：

[1] NCTU, Dept Photon, Hsinchu 30010, Taiwan

来源：

IDMC 05: PROCEEDINGS OF THE INTERNATIONAL DISPLAY MANUFACTURING CONFERENCE 2005 | 2005年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, the instability mechanisms and the diverse behaviors of n-channel LTPS TFTs under various bias stress conditions have been invesigated. Statistically, it was found that TFTs present the highest standard deviation under V-gs = 12.5 V and V-ds = 20 V. This was because the carriers gained energy to break only weak Si-Si bonds reflecting the different effects of the various grains on the hot carrier effects. Discussion of the variations in different bias stress conditions is helpful in determining the lifetime prediction of the system-on-panel (SOP) design.

引用

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页码：503 / 506

页数：4

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