AlGaN/GaN devices for future power switching systems

被引：0

作者：

Ueda, D ^{[1
]}

Murata, T ^{[1
]}

Hikita, M ^{[1
]}

Nakazawa, S ^{[1
]}

Kuroda, M ^{[1
]}

Ishida, H ^{[1
]}

Yanagihara, M ^{[1
]}

Inoue, K ^{[1
]}

Ueda, T ^{[1
]}

Uemoto, Y ^{[1
]}

Tanaka, T ^{[1
]}

Egawa, T ^{[1
]}

机构：

[1] Matsushita Elect Ind Co Ltd, Semicond Device Res Ctr, SC Co, Takatsuki, Osaka 5691193, Japan

来源：

IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2005, TECHNICAL DIGEST | 2005年

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

GaN/AlGaN device technologies are presented aiming at the applications to power switching systems. In order to reduce on-resistance (R-on), we developed SL (Super Lattice) capping and QA (Quaternary Alloy) over-layer techniques for GaN/AlGaN HFET. Further, we achieved almost the same mobility keeping the same 2DEG density for GaN/AlGaN hetero structure grown on Si (111) substrates, which will make the cost comparable to conventional Si one. The experimentally obtained R(on)A of the FET is 1.9 m Omega cm(2), which is 14 times lower than that of Si ones. Additionally, a novel approach to realize enhancement-mode operation of GaN/AlGaN FET is examined over R-plane sapphire, where non-polar AlGaN/GaN heterostructure, free from polarization charge, can be grown.

引用

页码：389 / 392

页数：4

共 50 条

[41] Architecture Choice for Radiation-Hard AlGaN/GaN HEMT Power Devices
Wellekens, D.
Stoffels, S.
Luu, A.
Haussy, M.
Melotte, M.
Agten, D.
Decoutere, S.
[J]. 2017 17TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS (RADECS), 2017, : 151 - 155
[42] High Power Switching Devices: Past, Present and Future
Shammas, N. Y. A.
Eio, S.
Chamumd, D.
[J]. CISST'10: PROCEEDINGS OF THE 4TH WSEAS INTERNATIONAL CONFERENCE ON CIRCUITS, SYSTEMS, SIGNAL AND TELECOMMUNICATIONS, 2009, : 192 - 209
[43] Comparison Investigations on Unclamped-Inductive-Switching Behaviors of Power GaN Switching Devices
Li, Sheng
Liu, Siyang
Zhang, Chi
Qian, Le
Xin, Shuxuan
Ge, Chen
Sun, Weifeng
[J]. IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, 2022, 69 (05) : 5041 - 5049
[44] Current Status and Future Prospects of GaN-on-GaN Vertical Power Devices
Suda, J.
[J]. 2022 INTERNATIONAL ELECTRON DEVICES MEETING, IEDM, 2022,
[45] AlGaN/GaN-on-Si monolithic power-switching gate current booster
Han, Sang-Woo
Jo, Min-Gi
Kim, Hyungtak
Cho, Chun-Hyung
Cha, Ho-Young
[J]. SOLID-STATE ELECTRONICS, 2017, 134 : 30 - 38
[46] DC Performance analysis of AlGaN/GaN HFMT for future High power applications
Pandit, Pratik P.
Arivazhagan, L.
Prajoon, P.
Rajkumar, J. S.
Ajayan, J.
Nirmal, D.
[J]. 2018 4TH INTERNATIONAL CONFERENCE ON DEVICES, CIRCUITS AND SYSTEMS (ICDCS), 2018, : 313 - 318
[47] Ultrathin-barrier AlGaN/GaN heterostructure: An AlGaN-recess-free technology for fabrication of lateral GaN-based power devices
Huang, Sen
Wang, Xinhua
Jiang, Qimeng
Guo, Fuqiang
Liu, Xinyu
[J]. 6TH IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM 2022), 2022, : 393 - 395
[48] Review of Pulse Test Setup for the Switching Characterization of GaN Power Devices
Zu, Guangze
Wen, Huiqing
Zhu, Yinxiao
Zhong, Rui
Bu, Qinglei
Liu, Wen
Zhao, Yinchao
Cui, Miao
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022, 69 (06) : 3003 - 3013
[49] GaN switching devices for high-frequency, KW power conversion
Boutros, K. S.
Chandrasekaran, S.
Luo, W. B.
Mehrotra, V.
[J]. PROCEEDINGS OF THE 18TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 2006, : 321 - +
[50] Hydrostatic pressure studies of GaN/AlGaN/GaN heterostructure devices with varying AlGaN thickness and composition
Steinke, Isaiah
Kauser, M. Z.
Ruden, P. Paul
Ni, Xianfeng
Morkoc, Hadis
Son, Kyung-ah
[J]. SEMICONDUCTOR DEFECT ENGINEERING-MATERIALS, SYNTHETIC STRUCTURES AND DEVICES II, 2007, 994 : 353 - +

← 1 2 3 4 5 →