AlGaN/GaN devices for future power switching systems

被引：0

作者：

Ueda, D ^{[1
]}

Murata, T ^{[1
]}

Hikita, M ^{[1
]}

Nakazawa, S ^{[1
]}

Kuroda, M ^{[1
]}

Ishida, H ^{[1
]}

Yanagihara, M ^{[1
]}

Inoue, K ^{[1
]}

Ueda, T ^{[1
]}

Uemoto, Y ^{[1
]}

Tanaka, T ^{[1
]}

Egawa, T ^{[1
]}

机构：

[1] Matsushita Elect Ind Co Ltd, Semicond Device Res Ctr, SC Co, Takatsuki, Osaka 5691193, Japan

来源：

IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2005, TECHNICAL DIGEST | 2005年

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

GaN/AlGaN device technologies are presented aiming at the applications to power switching systems. In order to reduce on-resistance (R-on), we developed SL (Super Lattice) capping and QA (Quaternary Alloy) over-layer techniques for GaN/AlGaN HFET. Further, we achieved almost the same mobility keeping the same 2DEG density for GaN/AlGaN hetero structure grown on Si (111) substrates, which will make the cost comparable to conventional Si one. The experimentally obtained R(on)A of the FET is 1.9 m Omega cm(2), which is 14 times lower than that of Si ones. Additionally, a novel approach to realize enhancement-mode operation of GaN/AlGaN FET is examined over R-plane sapphire, where non-polar AlGaN/GaN heterostructure, free from polarization charge, can be grown.

引用

页码：389 / 392

页数：4

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