Electrical And OES Diagnostics Of A Magnetized RF Discharge In CH4 Created By A Multihole Cathode Used For a-C:H Deposition

被引:0
|
作者
Djerourou, S. [1 ]
Henda, K. [1 ]
Ouchabane, M. [1 ]
机构
[1] Ctr Dev Technol Avancees, Lab Plasmas, Algiers, Algeria
关键词
RF (13.56 MHz) discharge; CH4; Plasma; a-C:H; optical emission spectroscopy (OES); actinometry;
D O I
暂无
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The present work is carried out in the context of the electrical and spectroscopic study of a reactor used for a-C:H deposition. We have studied the influence of the operation system parameters (incident power, pressure) on the self-bias voltage and on the saturation ion current density. The optical emission spectroscopy (OES) is used for the diagnostic by actinometry to determine the relative concentration of species (CH, H) present in the discharge. These measurements have been made over a wide range of incident power inputs of 50-300 W and pressures of 20-100 mTorr. For electrical diagnostic, the results obtained showed that the energy and ion flow bombarding the substrate presented a maximum values at high incident power and decreased with pressure. For spectroscopic diagnostic, the relative concentration of hydrogen and the kinetic of methylidyne radical versus the operation system parameters are studied. The first correlation between electrical and spectroscopic parameters and a-C:H deposition was found, polymer-like thin films with high deposition rates can be obtained at low pressure and with grounded substrate holder.
引用
下载
收藏
页码:228 / 231
页数:4
相关论文
共 50 条
  • [41] Modeling of H2 and H2/CH4 moderate-pressure microwave plasma used for diamond deposition
    Hassouni, K
    Leroy, O
    Farhat, S
    Gicquel, A
    PLASMA CHEMISTRY AND PLASMA PROCESSING, 1998, 18 (03) : 325 - 362
  • [42] Modeling of H2 and H2/CH4 moderate-pressure microwave plasma used for diamond deposition
    LIMHP, CNRS-UPN, Avenue J. B. Clément, 93430 Villetaneuse, France
    Plasma Chem. Plasma Process., 3 (325-362):
  • [43] Modeling of H2 and H2/CH4 Moderate-Pressure Microwave Plasma Used for Diamond Deposition
    K. Hassouni
    O. Leroy
    S. Farhat
    A. Gicquel
    Plasma Chemistry and Plasma Processing, 1998, 18 : 325 - 362
  • [44] ARF LASER-INDUCED DISCHARGE INTERRUPTION IN A MIXTURE OF C2H3CL/CF4/CH4, CF4/CH4, AND C2H3CL/HE
    SASAGAWA, T
    KAWAHARA, A
    OBARA, M
    IEEE TRANSACTIONS ON PLASMA SCIENCE, 1989, 17 (01) : 1 - 5
  • [45] Dust particle formation in low pressure Ar/CH4 and Ar/C2H2 discharges used for thin film deposition
    Berndt, J
    Hong, S
    Kovacevic, E
    Stefanovic, I
    Winter, J
    VACUUM, 2003, 71 (03) : 377 - 390
  • [46] Morphology, optical and electrical properties of Cu-Ni nanoparticles in a-C:H prepared by co-deposition of RF-sputtering and RF-PECVD
    Ghodselahi, T.
    Vesaghi, M. A.
    Gelali, A.
    Zahrabi, H.
    Solaymani, S.
    APPLIED SURFACE SCIENCE, 2011, 258 (02) : 727 - 731
  • [47] Surface reaction probabilities and kinetics of H, SiH3, Si2H5, CH3, and C2H5 during deposition of a-Si:H and a-C:H from H2, SiH4, and CH4 discharges
    Perrin, Jerome
    Shiratani, Masaharu
    Kae-Nune, Patrick
    Videlot, Herve
    Jolly, Jacques
    Guillon, Jean
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1998, 16 (01):
  • [48] Infrared analysis of bond configuration for the a-C:F:H films deposited at variable CHF3/CH4 flow ratios
    Xin, Y
    Ning, ZY
    Gan, ZQ
    Lu, XH
    Fang, L
    Cheng, SH
    ACTA PHYSICA SINICA, 2001, 50 (12) : 2492 - 2496
  • [49] Infrared analysis of bond configuration for the a-C:F:H films deposited at variable CHF3/CH4 flow ratios
    Yu, Xin
    Ning, Zhao-Yuan
    Gan, Zhao-Qiang
    Lu, Xin-Hua
    Fang, Liang
    Cheng, Shan-Hua
    Wuli Xuebao/Acta Physica Sinica, 2001, 50 (12): : 2495 - 2496
  • [50] PHOTO-LUMINESCENCE IN AMORPHOUS C=H FILMS PREPARED BY GLOW-DISCHARGE DECOMPOSITION OF CH4 OR C2H6
    WATANABE, I
    INOUE, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (03): : L176 - L178