Half-Wave Class DE Low dv/dt Rectifier

被引：0
|
作者：
Fukui, Kazuaki [1 ]
Koizumi, Hirotaka [1 ]
机构：
[1] Tokyo Univ Sci, Dept Elect Engn, Chiyoda Ku, Tokyo 1020073, Japan
来源：
2012 IEEE ASIA PACIFIC CONFERENCE ON CIRCUITS AND SYSTEMS (APCCAS) | 2012年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Class DE low dv/dt rectifier can reduce the diode switching losses with satisfying the peculiar switching conditions. Moreover, Class DE low dv/dt rectifier has the desirable characteristic of the low diode voltage stress which equals the output voltage. As Class DE low dv/dt rectifier, some variants can be considered. In this paper, a half-wave Class DE low dv/dt rectifier when the diode on duty ratio of each diode equals 0.25 is analyzed in detail and experimented.
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页码：69 / 72
页数：4
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