Half-Wave Class DE Low dv/dt Rectifier

被引：0

作者：

Fukui, Kazuaki ^{[1
]}

Koizumi, Hirotaka ^{[1
]}

机构：

[1] Tokyo Univ Sci, Dept Elect Engn, Chiyoda Ku, Tokyo 1020073, Japan

来源：

2012 IEEE ASIA PACIFIC CONFERENCE ON CIRCUITS AND SYSTEMS (APCCAS) | 2012年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Class DE low dv/dt rectifier can reduce the diode switching losses with satisfying the peculiar switching conditions. Moreover, Class DE low dv/dt rectifier has the desirable characteristic of the low diode voltage stress which equals the output voltage. As Class DE low dv/dt rectifier, some variants can be considered. In this paper, a half-wave Class DE low dv/dt rectifier when the diode on duty ratio of each diode equals 0.25 is analyzed in detail and experimented.

引用

页码：69 / 72

页数：4

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