CLASS-E HALF-WAVE LOW DV/DT RECTIFIER OPERATING IN A RANGE OF FREQUENCIES AROUND RESONANCE

被引：19
|
作者：
BIRCAGALATEANU, S
COCQUERELLE, JL
机构：
[1] LR 2EP-IRESTE, Graduate School of Electronic Engineering, University of Nantes
来源：
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-FUNDAMENTAL THEORY AND APPLICATIONS | 1995年 / 42卷 / 02期
关键词：
D O I：
10.1109/81.372848
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A Class E half-wave low dv/dt rectifier is analyzed; simulation and experimental results are given when it operates in a large range of frequencies around resonance. The diode parasitic capacitance is included in the parallel capacitance. The leads inductance and the isolation transformer leakage inductance (if any) are included in the series inductance. Simple and accurate modeling is thus possible. Equations describing the circuit operation are derived for the rectifier being driven by a sinusoidal voltage source. Theoretical, simulation and experimental results are in good agreement.
引用
收藏
页码：83 / 94
页数：12
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