Study on the Method to Analyze the Electrical Contact Resistances of Press-Pack IGBT devices

被引:7
|
作者
Wang, Xiao [1 ,2 ]
Li, Hui [1 ,2 ]
Yao, Ran [1 ,2 ]
Long, Haiyang [1 ,2 ]
Zhong, Yi [1 ,2 ]
Yu, Renze [1 ,2 ]
Li, Jinyuan [3 ]
机构
[1] Chongqing Univ, State Key Lab Power Transmiss Equipment & Syst Se, Chongqing 400044, Peoples R China
[2] Chongqing Univ, New Technol Sch Elect Engn, Chongqing 400044, Peoples R China
[3] Global Energy Interconnect Res Inst, Beijing 102209, Peoples R China
关键词
D O I
10.1109/eptc47984.2019.9026591
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Electrical contact resistances are the link between the mechanical model and the electrical model, which should be accurately determined to analyze the electro-thermal distribution of the press-pack IGBT devices. However, determining the electrical contact resistances is very difficult because they are affected by pressure and material properties and cannot be measured directly. In this paper, a method to identify electrical contact resistances is proposed based the electrical contact theory for press-pack IGBT devices. Firstly, the mathematical model of electrical contact resistance is derived by considering contact pressure, surface roughness, surface micro-hardness and material resistivity. Then, a circuit model of single-chip press-pack IGBT device is established by using the presented electrical contact resistances. Furthermore, the surface characteristics of the materials are analyzed to determine the parameters of electrical contact resistances, especially the effects of the chip surface metal coating. Finally, the influence of pressure on the electrical contact resistance of each contact surface of the device is also analyzed. The relationship of the on-resistance of the sing-chip press-pack IGBT device with pressure is obtained by using four-point probing approach. The validity of the proposed model is demonstrated.
引用
收藏
页码:613 / 617
页数:5
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