Insulation Simulation Analysis of Press-Pack IGBT

被引：4
|
作者：
Liu, Yuzhe [1 ]
Jiao, Chaoqun [1 ]
Zhao, Zhibin [2 ]
Pang, Chengzong [3 ]
Fan, Yuanliang [4 ]
机构：
[1] Beijing Jiaotong Univ, Sch Elect Engn, Beijing, Peoples R China
[2] North China Elect Power Univ, State Key Lab Alternate Elect Power Syst Renewabl, Beijing, Peoples R China
[3] Wichita State Univ, Dept Elect Engn & Comp Sci, Wichita, KS USA
[4] State Grid Fujian Elect Power Res Inst, Fujian Prov Enterprise Key Lab High Reliable Elec, Fuzhou, Peoples R China
来源：
PROCEEDINGS OF 2019 IEEE 3RD INTERNATIONAL ELECTRICAL AND ENERGY CONFERENCE (CIEEC) | 2019年
关键词：
press-pack IGBT; finite element simulation; electric field distribution; and optimization;
D O I：
10.1109/cieec47146.2019.cieec-2019663
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
In high voltage applications such as power grid and rail transportation, IGBT devices generally operate under very harsh conditions, which places high demands on device reliability. In this paper, the electric field distribution of silicon chip termination area and press-pack IGBT package structure under high voltage reverse bias experimental conditions is simulated by Fern software. The results indicate the potential electrical insulation failure areas in the package model and the corresponding optimization measures arc proposed. To sonic extent, the problem of breakdown discharge of IGBT devices during operation is alleviated.
引用
收藏
页码：1936 / 1940
页数：5
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