Packaged broadband amplifier for 40-Gb/s optical transmission systems in InPHBT technology

被引：2
|
作者：
Lee, Jong-Min [1 ]
Kim, Seong-Il [1 ]
Min, Byoung-Gue [1 ]
Ju, Chul-Won [1 ]
Lee, Kyung-Ho [1 ]
机构：
[1] Elect & Telecommun Res Inst, InP IC Team, IT Convergence & Components Lab, Taejon 305700, South Korea
来源：
JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2007年 / 50卷 / 03期
关键词：
InGaAs/InP HBT; broadband amplifier; package; 40; Gb/s;
D O I：
10.3938/jkps.50.871
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
A broadband amplifier for 40-Gb/s optical transmission systems was developed by using molecular-beam-epitaxy-based InGaAs/InP heterojunction bipolar transistor (HBT) technology. The developed InGaAs/lnP HBTs showed a cut-off frequency (f(T)) of 129 GHz and a maximum oscillation frequency (f(max)) of 175 GHz. The design and the performance of an InGaAs/InP broadband amplifier for 40-Gb/s receiver applications are presented. The on-wafer developed broadband amplifier provides a bandwidth of 30.5 GHz and a gain of 19.2 dB. Packaged broadband amplifier modules were successfully fabricated. A 40-Gb/s data eye with a 403 mV(pp) amplitude of the fabricated broadband amplifier module was achieved by using 40-Gb/s multiplexing voltage input signals.
引用
收藏
页码：871 / 874
页数：4
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