Screening and collective modes in disordered graphene antidot lattices

被引：14

作者：

Yuan, Shengjun ^{[1
]}

Jin, Fengping ^{[2
]}

Roldan, Rafael ^{[3
]}

Jauho, Antti-Pekka ^{[4
]}

Katsnelson, M. I. ^{[1
]}

机构：

[1] Radboud Univ Nijmegen, Inst Mol & Mat, NL-6525 AJ Nijmegen, Netherlands

[2] Res Ctr Julich, Julich Supercomp Ctr, Inst Adv Simulat, D-52425 Julich, Germany

[3] CSIC, Inst Ciencia Mat Madrid, E-28049 Madrid, Spain

[4] Tech Univ Denmark, Dept Micro & Nanotechnol, DTU Nanotech, CNG, DK-2800 Lyngby, Denmark

来源：

PHYSICAL REVIEW B | 2013年 / 88卷 / 19期

基金：

新加坡国家研究基金会;

关键词：

NANOPERFORATED GRAPHENE; LARGE-AREA; NANOMESH; SYSTEMS; LITHOGRAPHY; FABRICATION;

D O I：

10.1103/PhysRevB.88.195401

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The excitation spectrum and the collective modes of graphene antidot lattices (GALs) are studied in the context of a pi-band tight-binding model. The dynamical polarizability and dielectric function are calculated within the random-phase approximation. The effect of different kinds of disorder, such as geometric and chemical disorder, are included in our calculations. We highlight the main differences of GALs with respect to single-layer graphene (SLG). Our results show that, in addition to the well-understood bulk plasmon in doped samples, interband plasmons appear in GALs. We further show that the static screening properties of undoped and doped GALs quantitatively differ from SLG.

引用

页数：12

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