Graphene antidot lattices: Designed defects and spin qubits

被引:451
|
作者
Pedersen, Thomas G. [1 ]
Flindt, Christian [2 ,3 ]
Pedersen, Jesper [2 ]
Mortensen, Niels Asger [2 ]
Jauho, Antti-Pekka [2 ,3 ]
Pedersen, Kjeld [1 ]
机构
[1] Aalborg Univ, Dept Phys & Nanotech, DK-9220 Aalborg, Denmark
[2] DTU Nanotech, Dept Micro & Nanotechnol, DK-2800 Kongens Lyngby, Denmark
[3] Aalto Univ, Phys Lab, FI-02015 Espoo, Finland
关键词
D O I
10.1103/PhysRevLett.100.136804
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Antidot lattices, defined on a two-dimensional electron gas at a semiconductor heterostructure, are a well-studied class of man-made structures with intriguing physical properties. We point out that a closely related system, graphene sheets with regularly spaced holes ("antidots"), should display similar phenomenology, but within a much more favorable energy scale, a consequence of the Dirac fermion nature of the states around the Fermi level. Further, by leaving out some of the holes one can create defect states, or pairs of coupled defect states, which can function as hosts for electron spin qubits. We present a detailed study of the energetics of periodic graphene antidot lattices, analyze the level structure of a single defect, calculate the exchange coupling between a pair of spin qubits, and identify possible avenues for further developments.
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页数:4
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