Conduction mechanisms and charge trapping control in SiO2 nanoparticle MIM capacitors

被引:2
|
作者
Bheesayagari, Chenna R. [1 ]
Pons-Nin, Joan [1 ]
Orpella, Albert [1 ]
Veliz, Bremnen [1 ]
Bermejo, Sandra [1 ]
Dominguez-Pumar, Manuel [1 ]
机构
[1] Univ Politecn Cataluna, Micro & Nano Technol Grp, Barcelona, Spain
关键词
MIM capacitors; Silica nanospheres; Charge control; Electrospray; Sigma-delta control; MIXED CONDUCTORS; IMPEDANCE;
D O I
10.1016/j.electacta.2020.136202
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
The objective of this paper is to present a charge trapping control method for MIM capacitors in which the dielectric is made of electrospray-deposited silica nanoparticles. The influence of the bias voltage on the impedance spectra of the devices is analyzed, as well as the main conduction mechanisms along the structure. The control method allows to monitor and control the long term drifts in the impedance of these devices, which are a result of the applied bias voltages. (C) 2020 Elsevier Ltd. All rights reserved.
引用
收藏
页数:9
相关论文
共 50 条
  • [41] The charge trapping and memory effect in SiO2 thin films containing Ge nanocrystals
    Ang, R.
    Chen, T. P.
    Yang, M.
    Wong, J. I.
    Yi, M. D.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2010, 43 (01)
  • [42] Charge trapping and conduction mechanisms in Ta2O5on nitrided silicon
    Paskaleva, A
    Atanassova, E
    Georgieva, M
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2005, 38 (23) : 4210 - 4216
  • [43] Effect of Nanoparticle Surface Modification on Charge Transport Characteristics in XLPE/SiO2 Nanocomposites
    Zhang, Ling
    Zhou, Yuanxiang
    Huang, Meng
    Sha, Yanchao
    Tian, Jihuan
    Ye, Qing
    IEEE TRANSACTIONS ON DIELECTRICS AND ELECTRICAL INSULATION, 2014, 21 (02) : 424 - 433
  • [44] HOLE TRAPPING AND BREAKDOWN IN THIN SIO2
    CHEN, IC
    HOLLAND, S
    HU, CM
    IEEE ELECTRON DEVICE LETTERS, 1986, 7 (03) : 164 - 167
  • [45] Ionisation and trapping of hydrogen at SiO2 interfaces
    Afanas'ev, VV
    Stesmans, A
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 58 (1-2): : 56 - 59
  • [46] ELECTRON SELF-TRAPPING IN SIO2
    ASLAM, M
    JOURNAL OF APPLIED PHYSICS, 1987, 62 (01) : 159 - 162
  • [47] ELECTRON TRAPPING KINETICS IN SIO2 FILMS
    DIMARIA, DJ
    FEIGL, FJ
    BUTLER, SR
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1973, 18 (04): : 584 - 584
  • [48] The Electrical Performances and Leakage Current Conduction Mechanism of Al2O3/ZrO2/SiO2/ZrO2/Al2O3 MIM Capacitors
    Zhang, Q. X.
    INTEGRATED FERROELECTRICS, 2021, 217 (01) : 233 - 239
  • [49] Structural and charge trapping properties of two bilayer (Ge+SiO2)/SiO2 films deposited on rippled substrate
    Buljan, M.
    Grenzer, J.
    Holy, V.
    Radic, N.
    Misic-Radic, T.
    Levichev, S.
    Bernstorff, S.
    Pivac, B.
    Capan, I.
    APPLIED PHYSICS LETTERS, 2010, 97 (16)
  • [50] Modeling the Negative Quadratic VCC of SiO2 in MIM Capacitor
    Thanh Hoa Phung
    Steinmann, Philipp
    Wise, Rick
    Yeo, Yee-Chia
    Zhu, Chunxiang
    IEEE ELECTRON DEVICE LETTERS, 2011, 32 (12) : 1671 - 1673