Direct growth of high-quality Al2O3 dielectric on graphene layers by low-temperature H2O-based ALD

被引:35
|
作者
Zhang, Youwei [1 ,2 ]
Qiu, Zhijun [1 ]
Cheng, Xinhong [2 ]
Xie, Hong [2 ]
Wang, Haomin [2 ]
Xie, Xiaomin [2 ]
Yu, Yuehui [2 ]
Liu, Ran [1 ]
机构
[1] Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China
[2] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
基金
中国国家自然科学基金;
关键词
high-k dielectric film; atomic layer deposition; graphene transistor; DEPOSITION; CARBON; FILMS; OXIDE; XPS;
D O I
10.1088/0022-3727/47/5/055106
中图分类号
O59 [应用物理学];
学科分类号
摘要
A thin Al2O3 dielectric film was directly grown onto graphene layers without any surface treatment prior to H2O-based atomic layer deposition for the first time. The growth mechanism of Al2O3 dielectric film has been studied by changing the growth temperature and purge time. We found that the film morphology was influenced by the amount and distribution of physically adsorbed precursor molecules on the graphene, especially by physically adsorbed H2O molecules. Within an optimal temperature window, conformal and uniform Al2O3 thin films were obtained as confirmed by atomic force microscopy and transmission electron microscopy results. Raman spectroscopy revealed that no extra defects are generated in the graphene layers. Furthermore, the low leakage current and interface traps in dual-gated graphene field-effect transistors demonstrate the high-quality dielectric/graphene stack.
引用
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页数:6
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