Formation of nanocrystals embedded in a silicon nitride film at a low temperature (≤200 °C)

被引：10
|
作者：
Lee, Kyoung-Min [1 ]
Kim, Tae-Hwan [1 ]
Hong, Wan-Shick [1 ]
机构：
[1] Univ Seoul, Dept Nano Sci & Technol, Seoul 130743, South Korea
来源：
SCRIPTA MATERIALIA | 2008年 / 59卷 / 11期
关键词：
Silicon nanocrystals; Low temperature process; Catalytic CVD;
D O I：
10.1016/j.scriptamat.2008.08.006
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Silicon-rich silicon nitride films with embedded silicon nanocrystals (Si NCs) were fabricated successfully on plastic substrates at a low temperature by catalytic chemical vapor deposition. A mixture of SiH4, NH3 and H-2 was used as a source gas. Formation of the silicon nanocrystals was analyzed by photoluminescence spectra and was confirmed by transmission electron microscopy. The formation of Si NCs required an H-2/SiH4 mixture ratio that was higher than four. (c) 2008 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码：1190 / 1192
页数：3
相关论文
共 50 条
  • [41] The formation mechanism of the silicon nano-clusters embedded in silicon nitride
    Zou Xiang-Yun
    Yuan Jin-She
    Jiang Yi-Xiang
    ACTA PHYSICA SINICA, 2012, 61 (14)
  • [42] Characteristics and Charge Storage of Silicon Quantum Dots Embedded in Silicon Nitride Film
    Liao, Wugang
    Zeng, Xiangbin
    Wen, Xixing
    Zheng, Wenjun
    Wen, Yangyang
    Yao, Wei
    JOURNAL OF ELECTRONIC MATERIALS, 2015, 44 (03) : 1015 - 1020
  • [43] Excitonic photoluminescence characteristics of amorphous silicon nanoparticles embedded in silicon nitride film
    W. Yu
    J. Y. Zhang
    W. G. Ding
    G. S. Fu
    The European Physical Journal B, 2007, 57 : 53 - 56
  • [44] Characteristics and Charge Storage of Silicon Quantum Dots Embedded in Silicon Nitride Film
    Wugang Liao
    Xiangbin Zeng
    Xixing Wen
    Wenjun Zheng
    Yangyang Wen
    Wei Yao
    Journal of Electronic Materials, 2015, 44 : 1015 - 1020
  • [45] Excitonic photoluminescence characteristics of amorphous silicon nanoparticles embedded in silicon nitride film
    Yu, W.
    Zhang, J. Y.
    Ding, W. G.
    Fu, G. S.
    EUROPEAN PHYSICAL JOURNAL B, 2007, 57 (01): : 53 - 56
  • [46] Photoluminescence of As-Grown Silicon Nanocrystals Embedded in Silicon Nitride: Influence of Atomic Hydrogen Abundance
    Monroy, B. M.
    Santana, G.
    Benami, A.
    Ortiz, A.
    Alonso, J. C.
    Fandino, J.
    Cruz-Gandarilla, F.
    Aguilar-Hernandez, J.
    Contreras-Puente, G.
    Lopez-Suarez, A.
    Oliver, A.
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2009, 9 (05) : 2902 - 2909
  • [47] Low temperature nanocrystalline silicon nitride film grown on silicon (111) by radio frequency sputtering system
    Ali, Khuram
    Khan, Sohail A.
    MatJafri, M. Z.
    OPTIK, 2015, 126 (06): : 596 - 598
  • [48] SONOS memories with embedded silicon nanocrystals in nitride by In-situ deposition method
    Wu, Yi-Hong
    Chiang, Tsung-Yu
    Liu, Sheng-Hsien
    Yang, Wen-Luh
    Chao, Tien-Sheng
    Chin, Fun-Tat
    2008 IEEE INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUIT DESIGN AND TECHNOLOGY, PROCEEDINGS, 2008, : 195 - 198
  • [49] Low-Temperature Thin Film Encapsulation for MEMS With Silicon Nitride/Chromium Cap
    Persano, Anna
    Bagolini, Alvise
    Iannacci, Jacopo
    Novel, David
    Campa, Adriana
    Quaranta, Fabio
    IEEE SENSORS JOURNAL, 2023, 23 (15) : 16710 - 16720
  • [50] Film Characterization of Low-Temperature Silicon Carbon Nitride for Direct Bonding Applications
    Nagano, F.
    Iacovo, S.
    Phommahaxay, A.
    Inoue, F.
    Sleeckx, E.
    Beyer, G.
    Beyne, E.
    De. Gendt, S.
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2020, 9 (12)
12345