Formation of nanocrystals embedded in a silicon nitride film at a low temperature (≤200 °C)

被引：10

作者：

Lee, Kyoung-Min ^{[1
]}

Kim, Tae-Hwan ^{[1
]}

Hong, Wan-Shick ^{[1
]}

机构：

[1] Univ Seoul, Dept Nano Sci & Technol, Seoul 130743, South Korea

来源：

SCRIPTA MATERIALIA | 2008年 / 59卷 / 11期

关键词：

Silicon nanocrystals; Low temperature process; Catalytic CVD;

D O I：

10.1016/j.scriptamat.2008.08.006

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Silicon-rich silicon nitride films with embedded silicon nanocrystals (Si NCs) were fabricated successfully on plastic substrates at a low temperature by catalytic chemical vapor deposition. A mixture of SiH4, NH3 and H-2 was used as a source gas. Formation of the silicon nanocrystals was analyzed by photoluminescence spectra and was confirmed by transmission electron microscopy. The formation of Si NCs required an H-2/SiH4 mixture ratio that was higher than four. (c) 2008 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

引用

页码：1190 / 1192

页数：3

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