Synthesis of Highly n-Type Graphene by Using an Ionic Liquid

被引:39
|
作者
Bhunia, Prasenjit [1 ]
Hwang, Eunhee [1 ]
Yoon, Yeoheung [1 ]
Lee, Eunkyo [1 ]
Seo, Sohyeon [1 ]
Lee, Hyoyoung [1 ]
机构
[1] Sungkyunkwan Univ, Dept Chem, Ctr Smart Mol Memory, NCRI, Suwon 440746, South Korea
关键词
Dirac point; graphene; field effect transistor; ionic liquids; semiconductors; NITROGEN-DOPED GRAPHENE; GRAPHITE OXIDE; REDUCTION; SHEETS; SERIES;
D O I
10.1002/chem.201201593
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
引用
收藏
页码:12207 / 12212
页数:6
相关论文
共 50 条
  • [21] Electrochemical synthesis and the functionalization of few layer graphene in ionic liquid and redox ionic liquid
    Gomez-Mingot, Maria
    Anbalagan, Amarnath Chellachamy
    Randriamahazaka, Hyacinthe
    Ghilane, Jalal
    SCIENCE CHINA-CHEMISTRY, 2018, 61 (05) : 598 - 603
  • [22] Electrochemical synthesis and the functionalization of few layer graphene in ionic liquid and redox ionic liquid
    Maria Gómez-Mingot
    Amarnath Chellachamy Anbalagan
    Hyacinthe Randriamahazaka
    Jalal Ghilane
    Science China Chemistry, 2018, 61 : 598 - 603
  • [23] Electrochemical synthesis and the functionalization of few layer graphene in ionic liquid and redox ionic liquid
    Maria GmezMingot
    Amarnath Chellachamy Anbalagan
    Hyacinthe Randriamahazaka
    Jalal Ghilane
    Science China(Chemistry), 2018, 61 (05) : 598 - 603
  • [24] Spin drift in highly doped n-type Si
    Kameno, Makoto
    Ando, Yuichiro
    Shinjo, Teruya
    Koike, Hayato
    Sasaki, Tomoyuki
    Oikawa, Tohru
    Suzuki, Toshio
    Shiraishi, Masashi
    APPLIED PHYSICS LETTERS, 2014, 104 (09)
  • [25] Macropore formation on highly doped n-type silicon
    Christophersen, M.
    Carstensen, J.
    Föll, H.
    Physica Status Solidi (A) Applied Research, 2000, 182 (01): : 45 - 50
  • [26] Highly doped n-type silicon theoretical optimization
    Stem, N
    Cid, M
    1997 SBMO/IEEE MTTS-S - INTERNATIONAL MICROWAVE AND OPTOELECTRONICS CONFERENCE, PROCEEDINGS, VOLS 1 AND 2, 1997, : 637 - 642
  • [27] High-performance n-type organic field-effect transistors with ionic liquid gates
    Ono, S.
    Minder, N.
    Chen, Z.
    Facchetti, A.
    Morpurgo, A. F.
    APPLIED PHYSICS LETTERS, 2010, 97 (14)
  • [28] Macropore formation on highly doped n-type silicon
    Christophersen, M
    Cartensen, J
    Föll, H
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2000, 182 (01): : 45 - 50
  • [29] Negative Magnetoresistivity in Highly Doped n-Type GaN
    Konczewicz, Leszek
    Iwinska, Malgorzata
    Litwin-Staszewska, Elzbieta
    Zajac, Marcin
    Turski, Henryk
    Bockowski, Michal
    Schiavon, Dario
    Chlipala, Mikolaj
    Juillaguet, Sandrine
    Contreras, Sylvie
    MATERIALS, 2022, 15 (20)
  • [30] Unipolar Polymerized Ionic Liquid Copolymers as High-Capacitance Electrolyte Gates for n-Type Transistors
    Peltekoff, Alexander
    Hiller, Victoria E.
    Lopinski, Gregory P.
    Melville, Owen A.
    Lessard, Benoit H.
    ACS APPLIED POLYMER MATERIALS, 2019, 1 (11): : 3210 - 3221