Macropore formation on highly doped n-type silicon

被引：0
|
作者：
Christophersen, M [1 ]
Cartensen, J [1 ]
Föll, H [1 ]
机构：
[1] Univ Kiel, Fac Engn, Dept Mat Sci, D-24143 Kiel, Germany
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2000年 / 182卷 / 01期
关键词：
D O I：
10.1002/1521-396X(200011)182:1<45::AID-PSSA45>3.0.CO;2-6
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Using specially "designed" electrolytes, it is possible to obtain macropores even in highly doped n-type silicon (0.020-0.060 Omega cm) without illumination. Based on predictions of the "current-burst-model" [phys, stat. sol. (a) 182, 63 (2000), this issue], HF-containing electrolytes were systematically modified with strongly oxidizing components and evaluated with respect to their ability to produce macropores. Well developed macropores with depths up to 10 mum and pore diameters between 200 nm and 2 mum could be obtained in several cases. The macropore nucleation starts with a facetting of the surface on {111} planes.
引用
收藏
页码：45 / 50
页数：6
相关论文
共 50 条
  • [1] Macropore formation on highly doped n-type silicon
    Christophersen, M.
    Carstensen, J.
    Föll, H.
    Physica Status Solidi (A) Applied Research, 2000, 182 (01): : 45 - 50
  • [2] THE PHYSICS OF MACROPORE FORMATION IN LOW DOPED N-TYPE SILICON
    LEHMANN, V
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1993, 140 (10) : 2836 - 2843
  • [3] Macropore formation without illumination on low doped n-type silicon
    Bao, X. Q.
    Jiao, J. W.
    Wang, Y. L.
    Na, Kyoung Won
    Choi, H.
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2007, 154 (03) : D175 - D181
  • [4] One dimensional macropore-array formation on low doped n-type silicon
    Bao, X. Q.
    Jiao, J. W.
    Duan, F.
    Wang, Y. L.
    Na, K. W.
    Choi, H.
    ELECTROCHEMISTRY COMMUNICATIONS, 2007, 9 (07) : 1689 - 1694
  • [5] Fast speed nano-sized macropore formation on highly-doped n-type silicon via strong oxidizers
    Ge, D. H.
    Jiao, J. W.
    Zhang, S.
    Wang, Y. L.
    ELECTROCHEMISTRY COMMUNICATIONS, 2010, 12 (04) : 603 - 606
  • [6] Formation of High Aspect Ratio Macropore Array on n-Type Silicon
    Wang, Guozheng
    Li, Xiaona
    Yu, Fengyuan
    Zhang, Yao
    Liang, Yongzhao
    Chai, Jin
    Yang, Jikai
    Duanmu, Qingduo
    ADVANCED DESIGN AND MANUFACTURING TECHNOLOGY III, PTS 1-4, 2013, 397-400 : 47 - 51
  • [7] Fast macropore growth in n-type silicon
    Cojocaru, Ala
    Carstensen, Juergen
    Ossei-Wusu, Emmanuel K.
    Leisner, Malte
    Riemenschneider, Oliver
    Foell, Helmut
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 7, 2009, 6 (07): : 1571 - 1574
  • [8] Highly doped n-type silicon theoretical optimization
    Stem, N
    Cid, M
    1997 SBMO/IEEE MTTS-S - INTERNATIONAL MICROWAVE AND OPTOELECTRONICS CONFERENCE, PROCEEDINGS, VOLS 1 AND 2, 1997, : 637 - 642
  • [9] Formation of microporous silicon in straight macropore on n-type silicon under front side illumination
    Tan, Zhao-Yi
    Yuan, Yong-Gang
    An, Huan
    Zou, Yu
    Wu, Jian-Chun
    Zhan, Chang-Yong
    SURFACE & COATINGS TECHNOLOGY, 2019, 365 : 109 - 114
  • [10] Nano-photonic crystal formation on highly-doped n-type silicon
    Zhong F.-R.
    Jia Z.-H.
    Optoelectronics Letters, 2015, 11 (1) : 10 - 12
12345