Macropore formation on highly doped n-type silicon

被引：0

作者：

Christophersen, M ^{[1
]}

Cartensen, J ^{[1
]}

Föll, H ^{[1
]}

机构：

[1] Univ Kiel, Fac Engn, Dept Mat Sci, D-24143 Kiel, Germany

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2000年 / 182卷 / 01期

关键词：

D O I：

10.1002/1521-396X(200011)182:1<45::AID-PSSA45>3.0.CO;2-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Using specially "designed" electrolytes, it is possible to obtain macropores even in highly doped n-type silicon (0.020-0.060 Omega cm) without illumination. Based on predictions of the "current-burst-model" [phys, stat. sol. (a) 182, 63 (2000), this issue], HF-containing electrolytes were systematically modified with strongly oxidizing components and evaluated with respect to their ability to produce macropores. Well developed macropores with depths up to 10 mum and pore diameters between 200 nm and 2 mum could be obtained in several cases. The macropore nucleation starts with a facetting of the surface on {111} planes.

引用

页码：45 / 50

页数：6

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